Publicaciones

• Article dans une revue

Shielded cable transfer impedance measurements high frequency range 100 MHz-1 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 228, pp.42-50. ⟨hal-00597100⟩

• Communication dans un congrès

Extraction des performances AC et bruit HF d'une technologie CMOS 45 nm en gamme mmW

L. Poulain, N. Waldhoff, D. Gloria, Francois Danneville, Gilles Dambrine

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 162, 6E3, 1-4. ⟨hal-00597146⟩

• Article dans une revue

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked...

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Article dans une revue

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L.E. Wernersson

Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩. ⟨hal-00592100⟩

• Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

• Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩

• Communication dans un congrès

Growth of self-catalyzed GaAs nanowire arrays on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, K.A. Dick, X. Wallart, P. Caroff

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591395⟩

• Article dans une revue

High sensitive matrix-free mass spectrometry analysis of peptides using silicon nanowires-based digital microfluidic device

Florian Lapierre, Gaëlle Piret, Hervé Drobecq, Oleg Melnyk, Yannick Coffinier, Vincent Thomy, Rabah Boukherroub

We present for the first time an electrowetting on dielectric (EWOD) microfluidic system coupled to a surface-assisted laser desorption-ionization (SALDI) silicon nanowire-based interface for mass spectrometry (MS) analysis of small biomolecules. Here, the transfer of analytes has been achieved on...

Lab on a Chip, 2011, 11 (9), pp.1620-1628. ⟨10.1039/C0LC00716A⟩. ⟨hal-00591341⟩

• Communication dans un congrès

Atom probe investigation of silicon nanowires grown by VLS and IPSLS

W. M. Chen, P. Pareige, B. Grandidier, D. Stievenard, Lianbo Yu, Pere Roca I Cabarrocas

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591402⟩