Publicaciones

• Article dans une revue

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩

• Autre publication scientifique

Etude, conception et réalisation de transitions verticales coaxiales pour une intégration hétérogène 3D de microsystèmes en gamme millimétrique

Romain Crunelle

2011. ⟨hal-00799390⟩

• Autre publication scientifique

Etude et optimisation de dispositifs à base de matériaux faible gap pour applications hautes fréquences et ultra faible consommation

Albert M.D. Noudeviwa

2011. ⟨hal-00799384⟩

• Article dans une revue

Optical and electrochemical properties of tunable host-guest complexes linked to plasmonic interfaces

Fatiha Barka-Bouaifel, Joanna Niedziółka-Jönsson, Xavier Castel, Ophélie Saison-Francioso, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Patrice Woisel, Joël Lyskawa, Léna Sambe, Graeme Cooke, Nacer Bezzi, Rabah Boukherroub, Sabine Szunerits

This article describes the use of localized surface plasmon resonance (LSPR) interface to detect complexation/decomplexation steps of a controllable host–guest system at the solid–liquid interface. The LSPR interfaces consist of a sandwiched structure comprising a tin-doped indium oxide (ITO)...

Journal of Materials Chemistry, 2011, 21 (9), pp.3006-3013. ⟨10.1039/c0jm03293j⟩. ⟨hal-00579079⟩

• Communication dans un congrès

Étude par ultrasons-laser de l'influence d'un défaut débouchant sur la propagation des ondes acoustiques

Frédéric Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807691⟩

• Communication dans un congrès

Nanocomposants AlGaN/GaN : application à la détection THz

P. Sangare, B. Grimbert, M. Faucher, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 305, 2C4, 1-4. ⟨hal-00603132⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For...

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon...

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩