Publicaciones

• Article dans une revue

UWB multiple access communication system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

Wireless Personal Communications, 2011, 56, pp.333-352. ⟨10.1007/s11277-009-9835-8⟩. ⟨hal-00572654⟩

• Article dans une revue

From rejection to transmission with stacked arrays of split ring resonators

Jorge Carbonell, Eric Lheurette, Didier Lippens

We report on free space transmission experiments carried out on stacked split ring resonator (SRRs) arrays operating at microwave frequencies. We start from the case of a single frequency selective surface which exhibits a rejection at the SRR resonance frequency. By stacking SRR arrays in the...

Progress In Electromagnetics Research, 2011, 112, pp.215-224. ⟨10.2528/PIER10121402⟩. ⟨hal-00572634⟩

• Article dans une revue

Negative refraction of longitudinal waves in a two-dimensional solid-solid phononic crystal

Charles Croënne, E.D. Manga, B. Morvan, A. Tinel, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.054301-1-5. ⟨10.1103/PhysRevB.83.054301⟩. ⟨hal-00572641⟩

• Article dans une revue

Specific absorption rate (SAR) distribution in the human head at global system mobil (GSM) frequencies

S. Bri, S. Kassimi, M. Habibi, A. Mamouni

European Journal of Scientific Research, 2011, 49, pp.590-600. ⟨hal-00572657⟩

• Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled...

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

• Communication dans un congrès

Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Catania, Italy. pp.17-18. ⟨hal-00799700⟩