Publicaciones

Affichage de 6801 à 6810 sur 16086


  • Communication dans un congrès

Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications

Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, Emmanuelle Pichonat, Dominique Vignaud, Henri Happy

To synthesize monolayer graphene and realize defect free transfer for electronic devices application are still challenges. In this letter, we present the fabrication and characterization of graphene field effect transistor (GFET), with respect to key parameters of graphene growth on Cu by chemical...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018384⟩

  • Communication dans un congrès

Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique

Justine Philippe, Emmanuel Dubois, Francois Danneville, Daniel Gloria

Doctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France. ⟨hal-01005696⟩

  • Communication dans un congrès

MIMO and diversity techniques in tunnels

M. Lienard, Pierre Degauque, J.M. Molina-Garcia-Pardo, C. Sanchis-Borras

To improve the performances of a communication link, both in terms of capacity and bit error rate, MIMO technique is a solution which has been widely studied. However, in road or railway tunnels, the waves are guided by the structure and the angular spread of the rays, both at the transmitting side...

2nd International Conference on Computing, Management and Telecommunications, ComManTel 2014, 2014, Da Nang, Vietnam. paper 1569882487, 75-79, ⟨10.1109/ComManTel.2014.6825582⟩. ⟨hal-01005130⟩

  • Communication dans un congrès

Distributional upper bound on the interference in spatial wireless multiuser ultrawideband communication systems

Gareth W. Peters, Ido Nevat, Laurent Clavier, François Septier

We develop a novel distributional upper bound on the interference created in an ultra-wideband wireless communication systems under two general assumptions: the first is that there is an unknown number of interferers who are distributed according to a homogeneous Poisson point process randomly in...

IEEE International Conference on Acoustics, Speech, and Signal Processing, ICASSP 2014, 2014, Florence, Italy. pp.5764-5768, ⟨10.1109/ICASSP.2014.6854708⟩. ⟨hal-01056963⟩

  • Article dans une revue

[Invited] Ultrathin barrier GaN-on-silicon devices for millimeter wave applications

F Medjdoub

Microelectronics Reliability, 2014, 54, pp.1-12. ⟨10.1016/j.microrel.2013.11.009⟩. ⟨hal-00923934⟩

  • Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically...

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩