Publicaciones

• Article dans une revue

Influence of processing gases on the properties of cold atmospheric plasma SiOxCy coatings

H. Hamze, Maude Jimenez, D. Deresmes, Arnaud Beaurain, Nicolas Nuns, Michel Traisnel

Thin layers of SiOxCy (y = 4−x and 3 ≤ x ≤ 4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (Tof-Sims) the influence of...

Applied Surface Science, 2014, Applied Surface Science, 315 (1), pp.531-537. ⟨10.1016/j.apsusc.2013.12.108⟩. ⟨hal-03055748⟩

• Article dans une revue

Biostimulation as an attractive technique to reduce phenanthrene toxicity for meiofauna and bacteria in lagoon sediment

Haithem Louati, O.B. Said, A. Soltani, P. Got, Cristiana Cravo-Laureau, Robert Duran, P. Aissa, O. Pringault, E. Mahmoudi

A microcosm experiment was setup to examine (1) the effect of phenanthrene contamination on meiofauna and bacteria communities and (2) the effects of different bioremediation strategies on phenanthrene degradation and on the community structure of free-living marine nematodes. Sediments from...

Environmental Science and Pollution Research, 2014, 21 (5), pp.3670-3679. ⟨10.1007/s11356-013-2330-5⟩. ⟨hal-01631850⟩

• Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D...

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces...

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

• Article dans une revue

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline...

International Journal of Materials Engineering Innovation, 2014, 5 (4), pp.327. ⟨10.1504/IJMATEI.2014.066857⟩. ⟨hal-03525889⟩

• Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in...

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

• Article dans une revue

Experimental determination of temperature-dependent electron-electron collision frequency in isochorically heated warm dense gold

C. Fourment, F. Deneuville, D. Descamps, F. Dorchies, S. Petit, O. Peyrusse, B. Holst, V. Recoules

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (16), ⟨10.1103/PhysRevB.89.161110⟩. ⟨hal-01561840⟩

• Article dans une revue

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Fabian Schulz, Robert Drost, Sampsa K. Hämäläinen, Thomas Demonchaux, Ari P. Seitsonen, Peter Liljeroth

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (23), pp.2354293. ⟨10.1103/PhysRevB.89.235429⟩. ⟨hal-01044795⟩