Publicaciones

Affichage de 6761 à 6770 sur 16174


  • Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have...

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩

  • Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is...

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

  • Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white...

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

  • Communication dans un congrès

Characterization of multi-layered nanopore structure

Xiaokun Ding, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensly, Yujun Song, Alexey Klimov

Hybridization of nanostructures opens new avenues for the synthesis of nano-architectures with multi-function and novel physicochemical properties. In this paper, we developed nanosphere template assisted physical vapor deposition to fabricate ordered multi-layered nanostructures utilizing Ag/...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020258⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 3/5]

Raffaele Pisano

2014. ⟨hal-04511043⟩