Publications

Affichage de 4571 à 4580 sur 16077


  • Communication dans un congrès

Non-reciprocal behavior of one-dimensional piezoelectric structures with space-time modulated electrical boundary conditions

Charles Croënne, Jerome O. Vasseur, Olivier Bou Matar, Anne-Christine Hladky, Bertrand Dubus

5th International Conference on Phononic Crystals/Metamaterials, Phonon Transport, and Topological Phononics, PHONONICS 2019, Jun 2019, Tucson, United States. pp.347-348. ⟨hal-04534561⟩

  • Article dans une revue

A multi-band body-worn distributed exposure meter for personal radio-frequency dosimetry in diffuse indoor environments

Reza Aminzadeh, Arno Thielens, Davy Gaillot, M. Lienard, Lamine Kone, Sam Agneessens, Patrick van Torre, Matthias van Den Bossche, Leen Verloock, Stefan Dongus, Marloes Eeftens, Anke Huss, Roel Vermeulen, René de Seze, Elisabeth Cardis, Hendrik Rogier, Martin Roosli, Luc Martens, Wout Joseph

A multi-band body-worn distributed exposure meter (BWDM) is designed and calibrated for diffuse fields in a reverberation chamber (RC) for personal exposure assessment in indoor environments. The BWDM uses 22 nodes distributed over the torso and measures the incident power density (Sinc) on body…

IEEE Sensors Journal, 2019, 19 (16), pp.6927-6937. ⟨10.1109/JSEN.2019.2913309⟩. ⟨hal-03136449⟩

  • Article dans une revue

Bond model of second-harmonic generation in wurtzite ZnO(0002) structures with twin boundaries

H Hardhienata, I Priyadi, H Alatas, Md Birowosuto, Philippe Coquet

Journal of the Optical Society of America B, 2019, 36 (4), pp.1127-1137. ⟨10.1364/JOSAB.36.001127⟩. ⟨hal-03091465⟩

  • Article dans une revue

Nanocarbons for Biology and Medicine: Sensing, Imaging, and Drug Delivery

N. Panwar, A.m. Soehartono, K.k. Chan, S.w. Zeng, G.x. Xu, J.l. Qu, Philippe Coquet, K.t. Yong, X.y. Chen

Chem. Rev., 2019, 119, pp.9559-9656. ⟨10.1021/acs.chemrev.9b00099⟩. ⟨hal-03091457⟩

  • Communication dans un congrès

HEAP: A heterogeneous approximate floating-point multiplier for error tolerant applications

Amira Guesmi, Ihsen Alouani, Mouna Baklouti, Tarek Frikha, Mohamed Abid, Atika Rivenq

Floating point arithmetic is one of the most commonly used units in nowadays computing systems and is deployed for a wide range of domains and applications. While floating point operators offer high precision calculations, a plethora of applications such as multimedia processing and machine…

30th International Workshop on Rapid System Prototyping: Shortening the Path from Specification to Prototype, RSP 2019, Oct 2019, New York, United States. pp.36-42, ⟨10.1145/3339985.3358495⟩. ⟨hal-03528688⟩

  • Communication dans un congrès

Experimental study of depolarization and antenna correlation in tunnels in the 1.3 GHz band

Frederic Challita, Pierre Laly, M. Lienard, Davy Gaillot, Pierre Degauque, Wout Joseph

26th International Conference on Telecommunications, ICT 2019, Apr 2019, Hanoi, Vietnam. pp.458-462, ⟨10.1109/ICT.2019.8798860⟩. ⟨hal-03346246⟩

  • Article dans une revue

The Influence of Microstructure on the Passive Layer Chemistry and Corrosion Resistance for Some Titanium-Based Alloys

Nader El-Bagoury, Sameh Ahmed, Ola Ahmed Abu Ali, Shimaa El-Hadad, Ahmed Fallatah, G. Mersal, Mohamed Ibrahim, Joanna Wysocka, Jacek Ryl, Rabah Boukherroub, Mohammed A. Amin

The effect of microstructure and chemistry on the kinetics of passive layer growth and passivity breakdown of some Ti-based alloys, namely Ti-6Al-4V, Ti-6Al-7Nb and TC21 alloys, was studied. The rate of pitting corrosion was evaluated using cyclic polarization measurements. Chronoamperometry was…

Materials, 2019, 12 (8), pp.1233. ⟨10.3390/ma12081233⟩. ⟨hal-02373220⟩

  • Article dans une revue

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩