Publications

Affichage de 221 à 230 sur 16086


  • Communication dans un congrès

First demonstration of vertical AlGaN P-i-N diodes grown on silicon substrate for Next-Generation power electronics

Jash Mehta, Abdelkhalek Sefssafi, Antoine Barbier, Stephanie Rennesson, Fabrice Semond, Julien Brault, F Medjdoub

In this work, we report the first demonstration of quasi-vertical AlGaN PiN diodes grown directly on silicon substrates, paving the way toward high-performance, low-cost power electronics. GaN and AlGaN heterostructures were grown on 2-inch silicon wafers via molecular beam epitaxy. The AlGaN diode…

8th International Workshop on Ultra-Wide Bandgap Materials and Devices IWUMD 2025, Sep 2025, Wrocław, Poland. ⟨hal-05345878⟩

  • Communication dans un congrès

Optoelectronic and “Topological” Properties of HgTe Nanocrystals

Antoine Hage, Christophe Delerue

Let’s get physical II, Sep 2025, Gand, Belgium. ⟨hal-05267706⟩

  • Communication dans un congrès

Research into reliable tools for smart farming: application to the optimization of flax fiber production

S. Arscott

Workshop on vegetronics, CNRS, Sep 2025, Paris, France. ⟨hal-05363438⟩

  • Autre publication scientifique

Unique characteristics of the electronic and optical properties of HgTe nanocrystals

Antoine Hage, Christophe Delerue

2025. ⟨hal-05267695⟩

  • Communication dans un congrès

[Invited] Polyoxometalate Molecular Electronics.

Dominique Vuillaume

Polyoxometalates (POMs) are molecular nanostructures consisting of early transition metals and oxygen [1, 2]. As molecular oxides, they possess remarkable redox properties, combining the reducibility of bulk metal oxides with the high versatility of molecular species. They undergo successive,…

International Workshop on Molecular Scale Electronics, University of Lancaster, EPSRC Programme ‘Quantum Engineering of Energy Efficient Molecular Materials’ (QMol), Sep 2025, Lancaster, UK, United Kingdom. ⟨hal-05236516⟩