Publications

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/2]

Raffaele Pisano

2019. ⟨hal-04510996⟩

• Communication dans un congrès

Enlarging the Frontiers of Research in the IR/mm Range Using Synchrotron Radiation

J-B. Brubach, B. Langerome, M. Verseils, F. Capitani, T. Souske, Jean-Francois Lampin, S. Eliet, O. Pirali, M. A. Martin-Drumel, Francis Hindle, Gaël Mouret, C. Evain, C Szwaj, E. Roussel, S. Bielawski, T. Timusk, Pascale Roy

Optical probes are among the most important techniques for characterizing new physical states induced by changes of temperature and/or pressure. In link with its high brightness and wide spectral coverage, infrared synchrotron radiation is ideally suited for such studies when the quantity of…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873937⟩. ⟨hal-04295283⟩

• Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• Communication dans un congrès

Six-port technology for millimeter-wave metrology

Kamel Haddadi, Christophe Loyez, Katir Ziouche

The six-port measurement technique has played a major role in vector network analysis metrology, particularly within the community of national standards laboratories. Thanks to reduced hardware resource in contrast with conventional and well-established down-mixing heterodyne technique, this paper…

6th IEEE-Antennas-and-Propagation-Society (IEEE AP-S) Topical Meeting on Antenna Measurements & Applications (CAMA), Oct 2019, Bali, Indonesia. pp.81-84, ⟨10.1109/CAMA47423.2019.8959806⟩. ⟨hal-03224646⟩

• Communication dans un congrès

Energy-efficient techniques for combating the influence of reactive jamming using Non-Orthogonal Multiple Access and Distributed Antenna Systems

Joumana Farah, Jacques Akiki, Eric Pierre Simon

The aim of this work is to propose new approaches for maximizing the energy efficiency of downlink 5G mobile communication systems, in the presence of a reactive jammer. The concepts of non-orthogonal multiple access (NOMA) and distributed antenna systems (DAS) are exploited to devise joint subband…

Wireless Telecommunications Symposium (WTS 2019), Apr 2019, New York, NY, United States. ⟨10.48550/arXiv.1903.11574⟩. ⟨hal-04542881⟩

• Article dans une revue

Performance assessment of a small-size ocean wave energy harvester

Yongjie Sang, Bertrand Dubus

A lightweight electromechanical device is studied to harvest energy of ocean waves and supply electrical power to small-size ocean observation equipment such as sonobuoys. It is composed of a magnet fixed to the floating housing which follows the motion of the ocean surface and a moving coil…

MATEC Web of Conferences, 2019, 283, pp.05006. ⟨10.1051/matecconf/201928305006⟩. ⟨hal-02395559⟩

• Article dans une revue

Thermodynamic foundations of physical chemistry: reversible processes and thermal equilibrium into the history

Raffaele Pisano, Abdelkader Anakkar, Emilio Marco Pellegrino, Maxime Nagels

Foundations of Chemistry, 2019, 21 (3), pp.297-323. ⟨10.1007/s10698-018-09324-1⟩. ⟨hal-04507524⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/3]

Raffaele Pisano

2019. ⟨hal-04510995⟩

• Article dans une revue

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, F Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman

ABSTRACT Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN…

Applied Physics Letters, 2019, 115 (22), pp.221601. ⟨10.1063/1.5123374⟩. ⟨hal-02400602⟩