Publications

• Communication dans un congrès

High performance CMOS with enhanced property of mechanical flexibility

Emmanuel Dubois, Aurélien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Francois Danneville, J.F. Robillard, Daniel Gloria, Christine Raynaud

CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976625⟩

• Communication dans un congrès

Highly tunable Fabry-Perot resonators using piezoelectric phononic crystals

Bertrand Dubus, Marie -Fraise Ponge, Anne-Christine Hladky, Jerome O. Vasseur, Mai Phamthi

Theoretical and experimental analyses of piezoelectric stacks submitted to periodical electrical boundary conditions via electrodes, are conducted. These structures are shown to exhibit Bragg band gaps which are switched on or off by setting electrodes in short or open circuit. Band gap frequency…

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. paper 5B-6, 154-157, ⟨10.1109/ULTSYM.2014.0039⟩. ⟨hal-03300131⟩

• Article dans une revue

Ultralow-phase-noise oscillators based on BAW resonators

Mingdong Li, Seonho Seok, Nathalie Rolland, Paul-Alain Rolland, Hassan El Aabbaoui, Emeric de Foucauld, Pierre Vincent, Vincent Giordano

This paper presents two 2.1-GHz low-phase noise oscillators based on BAW resonators. Both a single-ended common base structure and a differential Colpitts structure have been implemented in a 0.25-μm BiCMOS process. The detailed design methods including the realization, optimization, and test are…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2014, 61, pp.903-912. ⟨10.1109/TUFFC.2014.2986⟩. ⟨hal-00996831⟩

• Article dans une revue

Optomechanic interaction in a corrugated phoxonic nanobeam cavity

Mourad Oudich, Said El-Jallal, Yan Pennec, Bahram Djafari-Rouhani, Jordi Gomis-Bresco, Daniel Navarro-Urrios, Clivia M. Sotomayor Torres, Alejandro Martínez, Abdelkader Makhoute

The interaction between phonons and photons is investigated theoretically in a phoxonic cavity inside a corrugated nanobeam waveguide presenting band gaps for both electromagnetic and elastic waves. The structure is made by drilling periodic holes on a silicon nanobeam with lateral periodic stubs…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, 245122, 9 p. ⟨10.1103/PhysRevB.89.245122⟩. ⟨hal-01015199⟩

• Communication dans un congrès

A focusing technique based on a data spatial diversity at millimetre-wave frequency

Michael Bocquet, Atika Rivenq, Christophe Loyez, Nathalie Rolland

This paper presents a new topology of data coding and data broadcasting exclusively sent to a specific location area. The proposed technique exploits specifically different received signals to focus energy and to rebuild information intelligibly only for a chosen position. By this way, the receiver…

2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Oct 2014, Rome, Italy. pp.913-916, ⟨10.1109/EuMC.2014.6986584⟩. ⟨hal-03528679⟩

• Communication dans un congrès

Patterning innovative conducting interpenetrating polymer network by dry etching

Alexandre Khaldi, Ali Maziz, Cedric Plesse, Caroline Soyer, Dominique Teyssié, Frederic Vidal, Eric Cattan

Interpenetrating polymer networks, as biomimetic actuators, can become successful actuators in the field of microsystems providing they are compatible with micro-technologies. In this paper, we report a novel material synthesized from poly(3,4-ethylenedioxythiophene) and polyethylene oxide)/nitrile…

IEEE/ASME International Conference on Advanced Intelligent Mechatronics, AIM 2014, 2014, Besançon, France. ⟨10.1109/AIM.2014.6878282⟩. ⟨hal-01058046⟩

• Article dans une revue

Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

A. Dehzangi, M.F. Mohd Razip Wee, Nicolas Wichmann, S. Bollaert, M.R. Buyong, B.Y. Majlis

A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping…

Micro and Nano Letters, 2014, 9, pp.180-183. ⟨10.1049/mnl.2014.0007⟩. ⟨hal-00969127⟩

• Communication dans un congrès

Lignes de transmission imprimées pour les applications RF jusqu'à 67 GHz

Mohamed Moez Belhaj, Wei Wei, Emiliano Pallecchi, Colin Mismer, Isabelle Roch-Jeune, Henri Happy

Cette lettre présente la caractérisation radiofréquence (RF) des guides d'ondes coplanaires (CPW) imprimées avec et sans déformation. Le PET et le Kapton sont choisis comme substrats souples avec des températures de frittage différentes. Avec les paramètres d'impression à jet d'encre…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018390⟩

• Communication dans un congrès

Contrôle de la porosité dans des films d'or pour des micro-supercondensateurs

Aymeric Pastre, K. Raulin, Alexandre Boé, Nathalie Rolland, Odile Cristini, R. Bernard

Cet article présente un matériau d'électrode original pour les micro-supercondensateurs basé sur un film mince d'or poreux. Le procédé de fabrication implique le dépôt d'or par un procédé de chimie en solution. L'utilisation de polymères comme templates nous permet de générer…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018420⟩

• Article dans une revue

A study on effect of wafer bow in wafer-level BCB cap transfer packaging

Seonho Seok, Janggil Kim

This paper investigates the effects of wafer bow of Si carrier wafer to achieve high-yield BCB cap transfer in wafer-scale packaging. BCB caps are built-up on Si carrier wafer and then they are bonded and transferred to a target wafer. The height of BCB cap is 25 lm and the thickness of Si carrier…

Microsystem Technologies, 2014, 20, pp.215-219. ⟨10.1007/s00542-013-1780-5⟩. ⟨hal-00939051⟩