Publications

Affichage de 6831 à 6840 sur 16232


  • Communication dans un congrès

Development of an industrial process for the fabrication of high efficiency N-type pert cells

T. Blévin, B. Grange, R. Cabal, Jean-Pierre Vilcot

5th Photovoltaic Technical Conference 'Thin Film and Advanced Silicon Solutions', PVTC 2014, 2014, Aix-en-Provence, France. ⟨hal-00989528⟩

  • Autre publication scientifique

Photomélangeurs THz efficaces à base de collage de substrat métallique employant l'indium

Philipp Latzel

2014. ⟨hal-00981856⟩

  • Communication dans un congrès

«Nanostructured Lead-Free La₂Ti₂O₇ Piezoelectric Islands Obtained by Ion-Beam Etching»

R. Desfeux, A. Ferri, S. Saitzek, Z. Shao, A. Bayart, J. Costecalde, D. Deresmes, David Troadec, Denis Remiens

no abstract

International Conference Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials – PFM 2014, 2014, Ekaterinburg, Russia. ⟨hal-01702958⟩

  • Communication dans un congrès

Organic synapstor for unconventional computing and biocompatible applications

Dominique Vuillaume

21st Korean Conference on Semiconductors, KCS 2014, International Symposium on Next Generation Terabit Memory Technology, 2014, Seoul, South Korea. ⟨hal-00957813⟩

  • Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

  • Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

  • Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

  • Communication dans un congrès

Narrow linewidth generation at 1 THz using cascaded Brillouin fiber lasers and quasi-optic UTC-PD

Guillaume Ducournau, Denis Bacquet, P. Szriftgiser, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Alexandre Beck, Jean-Francois Lampin

Narrow linewidth THz generation using a cascaded Brillouin fibre laser structure and a unitraveling carrier photodiode is proposed. Using two distributed feedback lasers separated by > 1 THz with 1 MHz initial linewidth, the linewidth of the realized THz source is found to be < 100 Hz at 1014…

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956153⟩. ⟨hal-03286169⟩