Publications

• Chapitre d'ouvrage

Preface. A Brief History of a Concept (Agamenon Oliveira's Author) [Preface]

Raffaele Pisano

A History of the Work Concept, Springer International Publishing, pp.v-vi, 2014, 978-94-007-7704-0. ⟨10.1007/978-3-031-12195-1⟩. ⟨hal-04509483⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• N°spécial de revue/special issue

[Editorial] Beamforming techniques for wireless MIMO relay networks

Athanasios G. Kanatas, Demosthenes Vouyioukas, Gan Zheng, Laurent Clavier

International Journal of Antennas and Propagation, 2014, Special Issue on Beamforming techniques for wireless MIMO relay networks, ⟨10.1155/2014/354714⟩. ⟨hal-01059856⟩

• Article dans une revue

Unconventional thin-film thermoelectric converters : structure, simulation, and comparative study

Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, Emmanuel Dubois

Bi2Te3 or Sb2Te3 are the materials most widely used in thermoelectric generators (TEG) operating near room temperature. These materials are, however, environmentally harmful, expensive, and incompatible with complementary metal-oxide semiconductor technology, in contrast to silicon (Si), germanium…

Journal of Electronic Materials, 2014, 43, pp.2109-2114. ⟨10.1007/s11664-014-2982-z⟩. ⟨hal-00994781⟩

• Article dans une revue

A one-dimensional optomechanical crystal with a complete phononic band gap

J. Gomis-Bresco, D. Navarro-Urrios, M. Oudich, Said El-Jallal, A. Griol, D. Puerto, E. Chavez, Yan Pennec, Bahram Djafari-Rouhani, F. Alzina, A. Martínez, C.M. Sotomayor Torres

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of…

Nature Communications, 2014, 5, pp.4452. ⟨10.1038/ncomms5452⟩. ⟨hal-01054998⟩

• Article dans une revue

Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies

Jaouad Marzouk, S. Arscott, Kamel Haddadi, Tuami Lasri, Christophe Boyaval, Sylvie Lepilliet, Gilles Dambrine

In this study, miniaturized microwave cantilever-based probes - using silicon-on-insulator (SOI) technology - are proposed for the on-chip electrical characterization of nanodevices. In contrast with conventional on-wafer probing structures, small pad dimensions around 1 μm2 associated with a 4.5…

Procedia Engineering, 2014, 87, pp.692-695. ⟨10.1016/j.proeng.2014.11.631⟩. ⟨hal-02345626⟩

• Communication dans un congrès

CW Radar for Monitoring Water-to-Cellular Concrete

Kamel Haddadi, Tuami Lasri

The physical deterioration of concrete structures is mainly caused by their moisture content. Consequently, methods dedicated to contactless, non-destructive and real-time monitoring of moisture content levels are required to control the deterioration of buildings. In this study, we propose an…

44th European Microwave Conference (EuMC), Oct 2014, Rome, Italie. pp.1832-1835. ⟨hal-03224673⟩

• Article dans une revue

100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès, Sonia Bagumako, L. Desplanque, Nicolas Wichmann, S. Bollaert, Francois Danneville, Xavier Wallart, Yannick Roelens

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have…

SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩. ⟨hal-00969148⟩

• Communication dans un congrès

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Sabah Benzeghda, Farida Hobar, Didier Decoster, Jean-Francois Lampin, A. Benzeghda

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is…

International Conference on Renewable Energies and Power Quality, ICREPQ'14, 2014, Córdoba, Spain. paper 534, 5 p., ⟨10.24084/repqj12.534⟩. ⟨hal-00955226⟩

• Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a…

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩