Publications

• Communication dans un congrès

Demonstration of ScAlN/GaN RF HEMTs on silicon substrate

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, N. Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

ScAlN ensures a very high carrier density at the interface with GaN in spite of very thin barrier, which makes it possible a promising barrier layer for HEMTs in view of power switching and RF/mm-wave power amplifier applications. We have demonstrated the feasibility of the growth with ammonia…

ICNS 15, Jul 2025, Malmö, Sweden. ⟨hal-05467612⟩

• Communication dans un congrès

Advanced Resource Management in Cell-Free Massive MIMO Systems with WINNER II Channels

Selina Cheggour, Eric Pierre Simon, Valeria Loscri

The evolution toward Beyond 5G (B5G) and Sixth-Generation (6G) networks demands innovative solutions to enhance connectivity and network efficiency. Cell-free massive multiple-input multiple-output (CF-mMIMO) systems address these challenges by deploying distributed access points (APs) to provide…

LANMAN 2025 - IEEE International Symposium on Local and Metropolitan Area Networks, Jul 2025, Lille, France. ⟨hal-05062956⟩

• Communication dans un congrès

Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, Maroun Dagher, Vishwajeet Maurya, Florian Bartoli, Eric Frayssinet, Farid Medjdoub, Julien Buckley, Yvon Cordier, Matthew Charles, Dominique Planson, Cyril Buttay

Vertical GaN power devices counters the drawbacks of the lateral ones. The best performances are observed with vertical GaN-on-GaN, but the absence of large GaN substrates makes the homoepitaxy option less marketable than the heteroepitaxy one. However, thick heteroepitaxial GaN drift layers must…

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩

• Communication dans un congrès

Buffer engineering to boost the blocking voltage of GaN High Electron Mobility Transistors on sapphire

Adrien Bidaud, Lyes Ben Hammou, Abdelkhalek Sefssafi, Etienne Okada, Katir Ziouche, Ajit Paranjpe, Farid Medjdoub

Enhance High-Power GaN HEMT Performance on Sapphire by Boosting breakdown voltage (BV) by integrating a back barrier combined with carbon-doped buffer engineering Minimizing leakage currents and trapping effects → Investigating the role of the back barrier in improving dynamic…

15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden. ⟨hal-05321265⟩

• Communication dans un congrès

Advancing RF GaN HEMT Technology: Innovations in Buffer Engineering for Enhanced Performance and Robustness

F Medjdoub

Advancing RF GaN HEMT technology is essential to meet the growing demands of next-generation RF power devices, particularly in the mm-wave spectrum, where high efficiency, robustness, and superior output power density are critical. Highly scaled GaN transistors, however, face significant challenges…

15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö Sweden, Sweden. ⟨hal-05344634⟩

• Communication dans un congrès

Thermal properties of nano-objects by means of scanning thermal microscopy

Antonin Massoud, Valeria Lacatena, Maciej Haras, Christian Mateo Frausto-Avila, Jose Manuel Sojo Gordillo, Gerard Gadea-Diez, Stéphane Monfray, Jean-Marie Bluet, J.F. Robillard, Victor Arellano-Arreola, Jose Martin Yañez Limon, Andres de Luna Bugallo, David Renahy, Marc Salleras, Carolina Duque Sierra, Pascal Vincent, Luisa Fonseca, Alex Morata, Albert Tarancón, Séverine Gomés, Pierre-Olivier Chapuis

FisMat 2025 biennial conference on condensed matter physics - Ultrafast Mechanical and Thermal Dynamics thematic workshop, Jul 2025, Venise, Italy. ⟨hal-05347651⟩

• HDR

Bridging Surface Science and van der Waals Engineering: Growth Mechanisms and Assembly of Functional Nanostructures

Nataliya Kalashnyk

This HDR memoir presents a concise overview of my research activity, from postgraduate studies to my current academic position, with a focus on nanoscience, surface science, and materials science. It begins with the scientific motivations behind the choice of these fields, followed by a summary of…

Physics [physics]. Université de Lille, 2025. ⟨tel-05137707⟩

• Communication dans un congrès

AlGaN channel high electron mobility transistors on Si for power electronics

Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Julien Pernot, Maud Nemoz, Sebastian Tamariz, Stéphanie Rennesson, Fabrice Semond, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France. ⟨hal-05398228⟩

• Communication dans un congrès

On the Trustworthiness of Spiking Neural Networks and Neuromorphic Systems

Theofilos Spyrou, Haralampos-G Stratigopoulos, Ihsen Alouani, Said Hamdioui, Anteneh Gebregiorgis

<div><p>Neuromorphic computing offers a promising solution for realizing energy-efficient and compact Artificial Intelligence (AI) systems. Implemented with Spiking Neural Networks (SNNs), neuromorphic systems can benefit from SNN characteristics, such as event-driven computation, event…

2025 IEEE European Test Symposium (ETS), May 2025, Tallinn, Estonia. pp.1-10, ⟨10.1109/ETS63895.2025.11049613⟩. ⟨hal-05215055⟩

• Communication dans un congrès

Back Barrier Integration for &gt; 4kV Blocking in GaN HEMTs on Sapphire without Field Plates

Adrien Bidaud, Lyes Ben-Hammou, Etienne Okada, Katir Ziouche, F Medjdoub

<div><p>This work presents a significant advancement in optimizing the trade-off between on-resistance and breakdown voltage in GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. By integrating an AlGaN back barrier and employing high carbon doping in the…

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2025), Jul 2025, Toulouse, France. ⟨hal-05346045⟩