Publications

Affichage de 261 à 270 sur 16183


  • Communication dans un congrès

7 GHz integrated modulator at 8.5 µm wavelength

Javier Huertas Pedroche, Victor Turpaud, Lucia Luca, Adel Bousseksou, Hamza Dely, Gia Long Ngo, Stefano Calcaterra, Davide Impelluso, Afonso de Cerdeira Oliveira, Victor Merupo, Emilien Peytavit, Jean-François Lampin, Stefano Barbieri, Jacopo Frigerio, Raffaele Colombelli, Giovanni Isella, Delphine Marris-Morini

Mid-infrared (mid-IR) spectroscopic systems have gained growing importance due to their ability to operate in the 2-20 µm spectral range, what makes them very useful in different applications such as defense, food safety control [1] or medical diagnosis [2]. This spectral range includes the…

XVIIth International Conference on Mid-IR Optoelectronics: Materials and Devices (MIOMD 2025), Jul 2025, Vienne, Austria. ⟨hal-05238032⟩

  • Article dans une revue

Electronic properties of the selenium passivated GaP(111)B surface: Towards growth of large scale quasi-van der Waals 2D/3D heterostructure

Niels Chapuis, Corentin Sthioul, Aymen Mahmoudi, Meryem Bouaziz, Christophe Coinon, Louis Thomas, Davide Romanin, Gilles Patriarche, Fabrice Oehler, Abdelkarim Ouerghi, Xavier Wallart

Physical Review Materials, 2025, 9 (7), pp.074002. ⟨10.1103/pv8b-89gg⟩. ⟨hal-05165772⟩

  • Communication dans un congrès

Demonstration of ScAlN/GaN RF HEMTs on silicon substrate

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, N. Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

ScAlN ensures a very high carrier density at the interface with GaN in spite of very thin barrier, which makes it possible a promising barrier layer for HEMTs in view of power switching and RF/mm-wave power amplifier applications. We have demonstrated the feasibility of the growth with ammonia…

ICNS 15, Jul 2025, Malmö, Sweden. ⟨hal-05467612⟩

  • Communication dans un congrès

Buffer engineering to boost the blocking voltage of GaN High Electron Mobility Transistors on sapphire

Adrien Bidaud, Lyes Ben Hammou, Abdelkhalek Sefssafi, Etienne Okada, Katir Ziouche, Ajit Paranjpe, Farid Medjdoub

Enhance High-Power GaN HEMT Performance on Sapphire by Boosting breakdown voltage (BV) by integrating a back barrier combined with carbon-doped buffer engineering Minimizing leakage currents and trapping effects → Investigating the role of the back barrier in improving dynamic…

15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden. ⟨hal-05321265⟩

  • Communication dans un congrès

Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, Maroun Dagher, Vishwajeet Maurya, Florian Bartoli, Eric Frayssinet, Farid Medjdoub, Julien Buckley, Yvon Cordier, Matthew Charles, Dominique Planson, Cyril Buttay

Vertical GaN power devices counters the drawbacks of the lateral ones. The best performances are observed with vertical GaN-on-GaN, but the absence of large GaN substrates makes the homoepitaxy option less marketable than the heteroepitaxy one. However, thick heteroepitaxial GaN drift layers must…

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩