Publications

• Thèse

Application de l'approche de la réponse impulsionnelle à la modélisation du rayonnement de transducteurs acoustiques de structure arbitraire, Application of the impulse response approach to the radiation modelling of arbitrarily structured transducers array

Khalid Sbai

Le travail effectué dans ce mémoire a conduit à l'élaboration d'un logiciel de simulation "DREAM" qui permet de calculer le champ acoustique rayonné par des transducteurs de surfaces planes et quasi-planes dont les ouvertures peuvent être structurées de manière quasi arbitraires…, The work done in this thesis has led to the development of simulation software "DREAM" to calculate the sound field radiated by transducers of flat surfaces and quasi-plane whose openings can be structured in an almost arbitrary. It takes into account all the characteristic parameters of…

Acoustique [physics.class-ph]. Université de Valenciennes et du Hainaut-Cambresis, 1996. Français. ⟨NNT : 1996VALE0023⟩. ⟨tel-00687979⟩

• Article dans une revue

Small- and large-signal measurements of low-temperature GaAs FETs

B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, M. Lipka, E. Kohn

Low-temperature (LT) GaAs FETs have been realized for high I × V products. They have been extensively characterized under dc, rf, pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated.…

Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. ⟨10.1002/(SICI)1098-2760(19960605)12:23.0.CO;2-M⟩. ⟨hal-01647683⟩

• Article dans une revue

Surface and interface optical waves in superlattices: transverse electric localized and resonant modes

M Bah, Abdellatif Akjouj, E Boudouti, B Djafari-Rouhani, Leonard Dobrzynski

Journal of Physics: Condensed Matter, 1996, 8 (23), pp.4171-4188. ⟨10.1088/0953-8984/8/23/010⟩. ⟨hal-04070050⟩

• Article dans une revue

Configuration effects of the existence conditions for interface bilayer spin waves

H. Puszkarski, R. Jozefowicz, B. Kołodziejczak, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1996, 352-354, pp.914-918. ⟨10.1016/0039-6028(95)01285-0⟩. ⟨hal-04070898⟩

• Communication dans un congrès

Physical MOSFET’s model for analog circuit design: application to cur¬rent copier based architectures

Emmanuel Dubois, E. Robilliart

Proc. of the International Symposium on Circuits and Systems IEEE- ISCAS’96, May 1996, Atlanta (GA), United States. ⟨hal-04249107⟩

• Article dans une revue

Acoustic scattering by a wire deposited on a planar surface

A. Khelif, B.Djafari Rouhani, Leonard Dobrzynski

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1996, 352-354, pp.1038-1042. ⟨10.1016/0039-6028(95)01323-7⟩. ⟨hal-04070961⟩

• Article dans une revue

Emergence and inflection angles in the configurational dependence of interface bilayer spin wave energies

H. Puszkarski, R. Józefowicz, B. Kolodziejczak, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

physica status solidi (b), 1996, 194 (2), pp.731-745. ⟨10.1002/pssb.2221940229⟩. ⟨hal-04070940⟩

• Article dans une revue

Extraction method of the base series resistances in bipolar transistor in presence of current crowding

Emmanuel Dubois, P.H. Bricout, E. Robilliart

This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base sheet resistance R<sub>&square; </sub…

IEEE Journal of Solid-State Circuits, 1996, 31 (1), pp.132-135. ⟨10.1109/4.485876⟩. ⟨hal-04246698⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Z. Bougrioua, J. Farvacque, D. Ferre

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with…

Journal of Applied Physics, 1996, 79 (3), pp.1536-1545. ⟨10.1063/1.360997⟩. ⟨hal-02415041⟩

• Proceedings/Recueil des communications

Resonant phonons in adsorbates

Leonard Dobrzynski, B. Djafari Rouhani, P. Zieliński, Abdellatif Akjouj, B. Sylla, E. Oumghar

After a brief review on surface phonons, we focus on resonant phonons in adsorbed thin 1ayers. Such resonances may in general be understood within the substrate bulk band as thin layer modes shiften and broaden by the i n t e r a c t i o n w i t h t h e s u b s t r a t e p h o n o n s. T h e s e r…

Acta Physica Polonica A, 89 (2), pp.139-144, 1996, ⟨10.12693/APhysPolA.89.139⟩. ⟨hal-04070920⟩