Publications

• Article dans une revue

Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

J. Mateos, T. González, D. Pardo, P. Tadyszak, Francois Danneville, A. Cappy

Solid-State Electronics, 1996, 39 (11), pp.1629-1636. ⟨10.1016/0038-1101(96)00083-4⟩. ⟨hal-03612845⟩

• Article dans une revue

Theory of surface and interface transverse elastic waves in N -layer superlattices

E. El Boudouti, B. Djafari-Rouhani, Abdellatif Akjouj, Leonard Dobrzynski

Physical Review B, 1996, 54 (20), pp.14728-14741. ⟨10.1103/PhysRevB.54.14728⟩. ⟨hal-04069559⟩

• Communication dans un congrès

Nano-Lithography by Scanning Probe Microscopy

Paul-Aymeric Fontaine, Emmanuel Dubois, Didier Stiévenard

Proc. of the Third European Workshop on Electrochemical Processing of Semiconductors EWEPS’96, Nov 1996, Paris, France. ⟨hal-04249080⟩

• Article dans une revue

Simple models of adsorbed polymers: Vibrational properties

P.A. Deymier, E. Oumghar, J.O. Vasseur, B. Djafari-Rouhani, Leonard Dobrzynski

Progress in Surface Science, 1996, 53 (2-4), pp.179-186. ⟨10.1016/S0079-6816(96)00015-9⟩. ⟨hal-04070888⟩

• Communication dans un congrès

Non-quasi-static SOI MOSFET model dedicated for analog circuit design

E. Robilliart, Emmanuel Dubois

1996 IEEE International SOI Conference Proceedings, Oct 1996, Sanibel Island, United States. pp.13-14, ⟨10.1109/SOI.1996.552470⟩. ⟨hal-04249085⟩

• Article dans une revue

PZT bulk acoustic wave resonators for MMIC technology

S. Arscott, Z. Awang, Y. Tu, S. Milne, R. Miles

Ferroelectrics, 1996, 187 (1), pp.49-56. ⟨10.1080/00150199608244843⟩. ⟨hal-02348161⟩

• Communication dans un congrès

A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation

Emmanuel Dubois

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, Sep 1996, Bologna (ITALY), Italy. ⟨hal-04248412⟩

• Communication dans un congrès

Accuracy and Convergence Properties of a One-Dimensional Numerical Non-Quasi-Static MOSFET’s Model for Circuit Simulation

E. Robilliart, Emmanuel Dubois

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 1996, Tokyo, Japan. pp.179-180, ⟨10.1109/SISPAD.1996.865328⟩. ⟨hal-04249094⟩

• Article dans une revue

Monte Carlo calculations of hot‐carrier noise under degenerate conditions

P. Tadyszak, Francois Danneville, A. Cappy, L. Reggiani, L. Varani, L. Rota

Applied Physics Letters, 1996, 69 (10), pp.1450-1452. ⟨10.1063/1.117611⟩. ⟨hal-02390160⟩

• Article dans une revue

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's

Dominique Vuillaume, A. Bravaix, D. Goguenheim, J.-C. Marchetaux, A. Boudou

For the original article see ibid., vol. 42, p. 1473 (1995). The commenters state that a clear proof of the generation of electron traps under hot-hole injections and a clear distinction from the effect of stress-induced interface states have been given by them in a paper (see ibid., vol. 40, p.…

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's". IEEE Transactions on Electron Devices, 1996, IEEE Transaction on Electron devices, 43 (9), pp.1473-1477. ⟨10.1109/16.535337⟩. ⟨hal-03022993⟩