Publications
Affichage de 14061 à 14070 sur 16106
Numerical analysis of the process induced stresses in silicon microstructures
V. Senez, T. Hoffmann, A. Armigliato, I. de Wolf
2003, pp.350-361. ⟨hal-00146444⟩
Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates
A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren
Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩
Détermination des paramètres limitant la montée des MOSFETs sub-100nm
M. Vanmackelberg, Sylvie Lepilliet, C. Raynaud, M. Dehan, Gilles Dambrine
2003, pp.1D-5. ⟨hal-00145999⟩
Réalisation d'un banc de mesure d'intermodulation biton en bande Ka : application à l'analyse des causes technologiques de non-linéarité des HEMTs de puissance
Frédéric Bue-Erkmen
2003. ⟨hal-00146643⟩
Study and realisation of a micromechanical relay for use in harsh environment
F. Conseil, P. Derderian, M.F. Ravat, D. Collard, L. Buchaillot
2003, pp.108-112. ⟨hal-00146461⟩
60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs
M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, Didier Theron
IEEE Electron Device Letters, 2003, 24, pp.724-726. ⟨hal-00146648⟩
Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals
Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp
Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩
Using stationary wavelet transform in BCH image coding
A. Seddiki, A. Djebbari, Jean-Michel Rouvaen
Technical Acoustics, 2003, 1, pp.1-8. ⟨hal-00147092⟩
Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : quantitative charge measurements and dipole-dipole interactions
Thierry Melin, H. Diesinger, D. Deresmes, D. Stiévenard
12th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM'03, 2003, Eindhoven, Netherlands. ⟨hal-00146614⟩
Amélioration du fmax des HEMTs InAlAs/InGaAs sur substrat d'InP de longueur de grille 70nm par optimisation de la structure de couche
I. Duszynski, T. Parenty, S. Bollaert, H. Happy, J. Mateos, X. Wallart, A. Cappy
2003, pp.2B1-1. ⟨hal-00145993⟩