Publications

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above…

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• Autre publication scientifique

Evaluation de la dégradation du béton par ondes ultrasonores

S. Ould Naffa

2004. ⟨hal-00162783⟩

• Ouvrages

Organic field effect transistors : towards molecular scale

G. Horowitz, F. Biscarini, D. Vuillaume

Elsevier, 177 p., 2004. ⟨hal-00133401⟩

• Article dans une revue

Broadband frequency filtering and mode matching using finline technology

T. Decoopman, X. Melique, O. Vanbésien, D. Lippens

Microwave and Optical Technology Letters, 2004, 41, pp.234-7. ⟨hal-00133953⟩

• Communication dans un congrès

Input impedance and radiation performance of planar and quasi-planar Fabry-Perot based directive antennas

Ronan Sauleau, Philippe Coquet

27th ESA Antenna Technology Workshop on Innovative Periodic Antennas, Mar 2004, Saint-Jacques de Compostelle, Spain. pp.401-408. ⟨hal-00549294⟩

• Communication dans un congrès

Design and modeling of microwave applicators and antennas for medical applications

Luc Dubois, Pierre-Yves Cresson, C. Ricard, Nicolas Bernardin, Joseph Pribetich

International Symposium on Microwave Science and its Application to Related Fields, Jul 2004, Takamatsu, Japan. ⟨hal-00133926⟩

• Article dans une revue

Measure of the temperature-depth profile by an S band radiometric receiver for biomedical applications

S. Bri, L. Zenkouar, A. Saadi, L. Bellarbi, M. Habibi, A. Mamouni

Annals of Telecommunications - annales des télécommunications, 2004, 59, pp.467-484. ⟨hal-00133928⟩

• Article dans une revue

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

F Medjdoub, F. Dessenne, Jean-Luc Thobel, M. Zaknoune, D. Theron

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced…

Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩. ⟨hal-00133956⟩

• Communication dans un congrès

100nm InAlAS/InGaAs double-gate HEMT using transferred substrate

Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2004, pp.1023-1026. ⟨hal-00133886⟩

• Communication dans un congrès

Design of K-band distributed amplifiers using FB and BC MOS

C. Pavageau, M. Si Moussa, A. Siligaris, L. Picheta, Francois Danneville, J.P. Raskin, D. Vanhoenaker-Janvier, J. Russat, N. Fel

MEDEA+ T206 SOI Workshop, 2004, Crolles, France. ⟨hal-00133902⟩