Publications

Affichage de 10051 à 10060 sur 16255


  • Communication dans un congrès

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, Joseph Bellaiche, Derek Smith, Hassan Maher, S. Bollaert

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease…

5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩

  • Communication dans un congrès

CW THz generation by In0.53Ga0.47As photomixer with TEM-horn antenna driven at 1.55 µm wavelengths

Juliette Mangeney, F. Meng, Djamal Gacemi, Emilien Peytavit, Jean-Francois Lampin, Tahsin Akalin

We report the continuous wave generation delivered by on ion-irradiated In 0.53 Ga 0.47 As photomixers coupled to transverse-electromagnetic-horn antenna using two lasers operating at ~1.55 μm wavelength. Output powers up to 0.1 μW at 700 GHz have been achieved. The output power in a regime of…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612586⟩. ⟨hal-00549952⟩

  • Communication dans un congrès

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, S. Bouzid, M. Renvoise, D. Smith, H. Maher

40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩. ⟨hal-00549999⟩

  • Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

  • Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

  • Article dans une revue

Unusual Curie point independence of thickness and interfacial properties for perfectly (111)-oriented Ba0.6Sr0.4TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2526-2529. ⟨10.1111/j.1551-2916.2010.03877.x⟩. ⟨hal-00549533⟩

  • Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩