Publicaciones
Affichage de 8831 à 8840 sur 16086
Electrical characterization of traps in AlGaN/GaN FAT-HEMT's on silicon substrate by C-V and DLTS measurements
M. Charfeddine, M. Gassoumi, H. Mosbahi, Christophe Gaquière, M.A. Zaidi, H. Maaref
Journal of Modern Physics, 2011, 2, pp.1229-1234. ⟨10.4236/jmp.2011.210152⟩. ⟨hal-00783410⟩
Cristaux phononiques et métamatériaux acoustiques. Applications aux phénomènes de guidage, filtrage et de l'isolation phonique
Hocine Larabi
2011. ⟨hal-00799434⟩
Réalisation et caractérisation de dispositifs MOSFET nanométriques à base de réseaux denses de nanofils verticaux en silicium
Xiang-Lei Han
2011. ⟨hal-00799413⟩
Germanium adsorption and initial growth on SrTiO3 (001) surface : a first principles investigation
J.J. Wang, I. Lefebvre
Journal of Physical Chemistry C, 2011, 115, pp.22893-22900. ⟨10.1021/jp205074w⟩. ⟨hal-00783408⟩
A sensor network based on RFID inventory for retail application
C. Anssens, N. Rolland, P.A. Rolland
IEEE International Conference on RFID-Technologies and Applications, RFID-TA 2011, 2011, Sitges, Spain. pp.64-67, ⟨10.1109/RFID-TA.2011.6068617⟩. ⟨hal-00799981⟩
RF characterization of epitaxial graphene nano-ribbon field effect tansistors
N. Meng, J. Ferrer-Fernandez, O. Lancry, E. Pichonat, D. Vignaud, Gilles Dambrine, H. Happy
IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. 1-3, selected as finalist of best student paper competition, ⟨10.1109/MWSYM.2011.5972627⟩. ⟨hal-00799963⟩
TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
Y. Wang, M.P. Chauvat, P. Ruterana, L. Desplanque, X. Wallart
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States. ⟨hal-00807156⟩
Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces
L. Desplanque, S. El Kazzi, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. ⟨hal-00807153⟩
Alternating current magnetoresistance for determination of electron mobility and concentration under the gate in submicrometer Si and GaN field effect transistors
R. Tauk, W. Knap, J. Lusakowski, M. Sakowicz, Z. Bougrioua, M. Aziz, P. Lorenzini, F. Boeuf, T. Skotnicki
Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807634⟩