Publicaciones

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman...

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the...

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were...

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Recent results on organic-based molecular memories

B. de Salvo, J. Buckley, D. Vuillaume

Current Applied Physics, 2011, 11, pp.e49-e57. ⟨10.1016/j.cap.2010.11.122⟩. ⟨hal-00639856⟩

• Article dans une revue

Cylinder rolling on a wall at low Reynolds numbers

A. Merlen, C. Frankiewicz

Journal of Fluid Mechanics, 2011, 685, pp.461-494. ⟨10.1017/jfm.2011.331⟩. ⟨hal-00639831⟩

• Article dans une revue

Growth of GaN based structures on focused ion beam patterned GaN

Yvon Cordier, Olivier Tottereau, Lee Nguyen, Mohammed Réda Ramdani, Ali Soltani, Mohamed Boucherit, David Troadec, Fang-Yuh Lo, Y.Y. Hu, Arne Ludwig, Andreas D Wieck

Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the regrowth of GaN based heterostructures. We study...

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (5), pp.1516-1519. ⟨10.1002/pssc.201000882⟩. ⟨hal-00603099⟩

• Article dans une revue

Influence of cold remote nitrogen oxygen plasma treatment on carbon fabric and its composites with specialty polymers

S. Tiwari, M. Sharma, S. Panier, B. Mutel, P. Mitschang, J. Bijwe

Journal of Materials Science, 2011, 46, pp.964-974. ⟨10.1007/s10853-010-4847-z⟩. ⟨hal-00572655⟩

• Chapitre d'ouvrage

Helping psychology students improve their statistics performance: A test of the Exo-St@ts web-based training environment

M Delaval, Olivier Le Bohec, Y. Noel, N Michinov, Alessandro Guida, S Musca, V Dodeler

Education in a Technological World: Communicating Current and Emerging Research and Technological Efforts / ed. A. Mendez-Vilas, Formatex, pp.231-236, 2011, 978-84-939843-3-5. ⟨hal-01759547⟩

• Article dans une revue

Functionalization of silicon nanowires for specific sensing

V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, J.P. Raskin

Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of...

ECS Transactions, 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩