Publicaciones

• Communication dans un congrès

Impact of the intrinsic parameters of the dielectric on the leakage current

G. Larrieu, M. Tao

2nd International Workshop on Advanced Gate Stack Technology, 2005, Austin, TX, United States. ⟨hal-00138407⟩

• Autre publication scientifique

Schémas de modulation et de codage spécifiques pour les communications hauts débits pour les trains à grande vitesse

M. Chennaoui

2005. ⟨hal-00138636⟩

• Autre publication scientifique

Compatibilité électromagnétique des lignes ferroviaires électrifiées : évaluation de l'influence de l'infrastructure

A. Cozza

2005. ⟨hal-00138590⟩

• Communication dans un congrès

Numerical modelling of a buried directional seismic source

Madjid Berraki, Axelle Baroni, Bertrand Dubus

This study investigates the feasibility of a buried directional seismic source for purpose of monitoring or foothills imaging. A numerical model is presented, which aims at determine the elastic wave field radiated by a theoretical directional source embedded in a layered half space.

Proceedings of the 74th Meeting of the Society of Exploration Geophysics, Oct 2004, Denver, CO, United States. ⟨hal-00131110⟩

• Communication dans un congrès

Explicit versus implicit finite-difference approximation for semiconductor device time-domain macroscopic numerical modelling on parallel computer

A. El Moussati, Christophe Dalle

Proceedings of the 15th Workshop on Modelling and Simulation of Electron Devices, 2005, Pisa, Italy. ⟨hal-00131335⟩

• Article dans une revue

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩

• Article dans une revue

Resonant Raman scatterring study of Ar⁺ ion-implanted AlGaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

160 keV Ar+ ions were homogeneously implanted in AlGaN at room temperature for device isolation purposes. Resonance Raman spectroscopy and DC electrical measurements were used to monitor the structural and electrical changes of the non-annealed and annealed implanted AlGaN samples with a dose...

• Communication dans un congrès

On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

R. Rengel, M.J. Martin, G. Pailloncy, Gilles Dambrine, Francois Danneville

2005, pp.745-748. ⟨hal-00125309⟩

• Communication dans un congrès

Dual-wavelength multimode fibre transmission of digital and RF signals

C. Sion, A. Roche, A. da Costa de Matos, Christophe Loyez, C. Lethien, R. Hamelin, Jean-Pierre Vilcot

12th NEFERTITI Workshop PWCom, 2005, Sähörus, Sweden. ⟨hal-00125337⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers

G. Wolf, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine, H. Happy

2005, pp.93-95. ⟨hal-00125302⟩