Publicaciones

• Communication dans un congrès

Molecular interactions of PTCDA on Si(100) and H-Si(100) surfaces : towards self-assembled molecular nanocristals

Francois Vaurette, T. Soubiron, B. Grandidier, J.P. Nys, X. Wallart, D. Stiévenard

Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126448⟩

• Communication dans un congrès

AlGaN/GaN : processing and characterisation at TIGER laboratory

Raphaël Aubry, Damien Ducatteau, Erwan Morvan, B. Grimbert, Thierry Dean, M. Francois, S. Touati, Virginie Hoel, J.C. Pesant, A. Leroy, D. Thenot, Marie-Antoinette Di Forte-Poisson, Michel Rousseau, Eva Chartier

13th European Gallium Arsenide and Other Semiconductor Applications Symposium, GAAS 2005, 2005, Paris, France. ⟨hal-00126465⟩

• Communication dans un congrès

Acceptor states in GaAs studied by X-STS at 5K

B. Grandidier, G. Mahieu, D. Deresmes, J.P. Nys, D. Stievenard, P. Ebert

13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, STM'05, 2005, Sapporo, Japan. ⟨hal-00126437⟩

• Communication dans un congrès

Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

Comsol Multiphysics Conference, 2005, Paris, France. ⟨hal-00126464⟩

• Proceedings/Recueil des communications

Aggregati and congiunti

Raffaele Pisano

Proceedings of XCI SIF National Congress Italian Society of Physics, SIF, pp.45-46, 2005. ⟨hal-04515843⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the...

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩

• Communication dans un congrès

Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz

D. Glay, T. Lasri

2005, pp.206-213. ⟨hal-00125334⟩

• Communication dans un congrès

High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

X. Wallart, J. Lastennet, F. Mollot

2005, pp.94-97. ⟨hal-00125391⟩