Publicaciones

• Communication dans un congrès

Mathematics, Logic & Culture, Part Two

Raffaele Pisano

2nd Mathesis/ADT Symposium, 22–25 September, Mathesis & ADT, Sep 2005, Otranto, Italy, Italy. ⟨hal-04519656⟩

• Article dans une revue

Photochemical oxidation of hydrogenated boron-doped diamond surfaces

Rabah Boukherroub, Xavier Wallart, Sabine Szunerits, Bernadette Marcus, Pierre Bouvier, Michel Mermoux

We describe the photochemical oxidation of polycrystalline boron-doped diamond films by UV irradiation in air at room temperature. The reaction generates surface hydroxyl groups that have been coupled with perfluorodecyl trichlorosilane to yield an organic layer covalently attached to the diamond...

Electrochemistry Communications, 2005, 7 (9), pp. 937-940. ⟨10.1016/j.elecom.2005.05.010⟩. ⟨hal-00333060⟩

• Article dans une revue

Resonating piezoelectric membranes for microelectromechanically based bioassay: detection of streptavidin–gold nanoparticles interaction with biotinylated DNA

Liviu Nicu, Matthieu Guirardel, Frédéric Chambosse, Pierre Rougerie, Sary Hinh, Emmanuelle Trévisiol, Jean Marie François, Jean Pierre Majoral, Anne-Marie Caminade, Eric Cattan, Christian Bergaud

In this article a new device based on 4 × 4 matrix micromachined resonating piezoelectric membranes used as DNA–DNA hybridization biosensor is proposed. This biosensor is operated in two fundamental different ways, namely integrated in a flow injection analysis (FIA) system and providing...

Sensors and Actuators B: Chemical, 2005, 110 (1), pp.125 - 136. ⟨10.1016/j.snb.2005.01.021⟩. ⟨hal-01848353⟩

• Communication dans un congrès

Ondes de Lamb dans une plaque comportant une interface striée avec plusieurs périodicités spatiales

Damien Leduc, Anne-Christine Hladky, Bruno Morvan, Jean-Louis Izbicki, Pascal Pareige

La propagation d'ondes de Lamb dans une plaque comportant une interface striée est étudiée. Lorsque le profil ne comporte qu'une périodicité spatiale alors un mode réflechi-converti peut être observé. Le nombre d'onde de ce mode réflechi-converti est déterminé dans le plan nombre d...

17e Congrès Français de Mécanique, Aug 2005, Troyes, France. ⟨hal-04090910⟩

• Article dans une revue

Anisotropy-induced polarization mixture of surface acoustic waves in Ga N ∕ c -sapphire heterostructures

J. Pedrós, F. Calle, J. Grajal, R. Jiménez Riobóo, Y. Takagaki, K. Ploog, Z. Bougrioua

The characteristics of surface acoustic waves (SAWs) in GaN layers grown on c-plane sapphire are investigated. Besides Rayleigh mode, Sezawa and Love modes, which are confined in the nitride layers, arise because of the slow sound propagation in GaN compared with the substrate. In addition, pseudo-...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (7), ⟨10.1103/PhysRevB.72.075306⟩. ⟨hal-02906694⟩

• Communication dans un congrès

High fractionally spaced constant modulus blind equalization for high order-QAM signalling

A. Zaouche, Iyad Dayoub, Jean-Michel Rouvaen

2005 Microwave Electronics: Measurements, Identification, Applications, Jul 2005, Bordeaux, France. pp.197-202, ⟨10.1109/SSP.2005.1628590⟩. ⟨hal-03383099⟩

• Thèse

Croissance métamorphique par Epitaxie par Jets Moléculaires et caractérisations physiques pour Transistor Bipolaire à Hétérojonction InP/InGaAs sur GaAs, Metamorphic growth by Molecular Beam Epitaxy and physical characterizations for InP/InGaAs Heterojunction Bipolar Transistor on GaAs

Eric Lefebvre

Les Transistors Bipolaires à Hétérojonction fonctionnent à hautes fréquences sous des tensions d'environ 5V, en particulier dans le système de matériaux InP/InGaAs. Il est souhaitable d'obtenir ces performances non pas sur InP mais sur GaAs, substrat plus robuste, disponible en taille..., Heterojunction Bipolar Transistors currently operate at high frequencies under voltage of approximately 5V, in particular in the InP/InGaAs materials system. It is desirable to obtain these performances on GaAs rather than on InP substrates, because GaAs ones are more reliable, available in higher...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00070835⟩

• Article dans une revue

Truly Quantitative XPS Characterization of Organic Monolayers on Silicon: Study of Alkyl and Alkoxy Monolayers on H−Si(111)

Xavier Wallart, Catherine Henry de Villeneuve, Philippe Allongue

The quantitative characterization of the chemical composition (bonding at grafted and ungrafted sites, surface coverage) is a key issue for the application of silicon-organic monolayer hybrid interfaces. The primary purpose of this article is to demonstrate that X-ray photoelectron spectroscopy (...

Journal of the American Chemical Society, 2005, 127 (21), pp.7871-7878. ⟨10.1021/ja0430797⟩. ⟨hal-04166388⟩

• Article dans une revue

Dielectric characterization in a broad frequency and temperature range of SrBi2Nb2O9 thin films grown on Pt electrodes

Maryline Guilloux-Viry, Jean-René Duclere, A. Rousseau, A. Perrin, Didier Fasquelle, Jean-Claude Carru, Eric Cattan, Caroline Soyer, Denis Remiens

Ferroelectric and dielectric characteristics of two types of SrBi2Nb2O9 thin films grown by pulsed laser deposition on Pt electrodes were determined: a randomly oriented SrBi2Nb2O9 film (sample A), grown on a so-called polycrystalline Pt/Ti/SiO2/Si (Pt/Si) and an epitaxial SrBi2Nb2O9 film (sample B...

Journal of Applied Physics, 2005, 97 (11), pp.114102. ⟨10.1063/1.1904726⟩. ⟨hal-00130820⟩

• Article dans une revue

Package-free infrared micro sensor using polysilicon thermopile

Mohamed Boutchich, Katir Ziouche, M. Ait-Hammouda Yala, Pascale Godts, Didier Leclercq

In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile has been developed using thermoelectric properties of phosphorus and boron...

Sensors and Actuators A: Physical , 2005, 121 (1), pp.52-58. ⟨10.1016/j.sna.2005.01.016⟩. ⟨hal-00125621⟩