Publicaciones

• Article dans une revue

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩. ⟨hal-00329604⟩

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth....

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of...

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Communication dans un congrès

A new organic memory FET

C. Novembre, David Guérin, K. Lmimouni, C. Gamrat, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163253⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Communication dans un congrès

Dynamical study of the electrical transport through molecular tunnel junctions with consideration of interface impurities

N. Clement, S. Pleutin, O. Seitz, S. Lenfant, D. Cahen, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163251⟩

• Article dans une revue

Impact features on Stardust : implications for Comet 81P/Wild 2 dust

F. Hörz, Renaud Bastien, J. Borg, J.P. Bradley, J.C. Bridges, D.E. Brownlee, M.J. Burchell, M. Chi, M.J. Cintala, Z.R. Dai, Z. Djouadi, G. Dominguez, Et Al., David Troadec

Science, 2006, 314, pp.1716-1719. ⟨hal-00138909⟩

• Article dans une revue

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement...

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des..., Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩