Publications

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

Electrical transport measurements of individual III-V semiconductor nanowires with reconstructed sidewalls

Corentin Durand, Maxime Berthe, Y. Makoudi, T.H. Nguyen, P. Caroff, J.P. Nys, B. Grandidier

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00798122⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

• Communication dans un congrès

Third-order complex amplitudes tracking loop for slow fading channel estimation

H.Q. Shu, L. Ros, E.P. Simon

19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩

• Article dans une revue

Wood anomaly transmission enhancement in fishnet-based metamaterials at terahertz frequencies

N. Soltani, Eric Lheurette, D. Lippens

Journal of Applied Physics, 2012, 112, pp.124509-1-8. ⟨10.1063/1.4769744⟩. ⟨hal-00786993⟩

• Article dans une revue

Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

We investigate the influence of the Sb flux on the growth of GaSb islands on a highly mismatched (001) GaP substrate. Between low and medium Sb flux values, standard kinetics drives the GaSb island formation and their relaxation is progressively favored by 90° misfit dislocations at the GaSb/GaP…

Journal of Applied Physics, 2012, 111 (12), pp.123506. ⟨10.1063/1.4729548⟩. ⟨hal-00786989⟩

• Communication dans un congrès

Quick estimation of the fundamental resonance of an aircraft exposed to HPEM with hybrid method

Samuel Leman, Alain Reineix, Madjid Mahmoudi, Yannick Poire, Frédéric Hoëppe, Bernard Démoulin

European electromagnetics, EuroEM 2012, Jul 2012, Toulouse, France. pp.Inconnu. ⟨hal-00780612⟩