Publications
Affichage de 8131 à 8140 sur 16231
An Historical Inquiry on Geometry in Relativity: Reflections on Early Relationship Geometry–Physics (Part II)
Raffaele Pisano, Ferdinando Casolaro
Journal of History Research, 2012, 2 (1), pp.57-65. ⟨hal-04507941⟩
The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks
B. van Damme, K. van den Abeele, Olivier Bou Matar
Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩
In0.53Ga0.47As MOSFET with gate-first and gate-last process
J.J. Mo, Nicolas Wichmann, S. Bollaert
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩
AlGaN/GaN based field effect transistors for terahertz detection and imaging
M. Sakowicz, M.B. Lifshits, O.A. Klimenko, D. Coquillat, N. Dyakonova, F. Teppe, Christophe Gaquière, M.A. Poisson, S. Delage, W. Knap
SPIE 2012 Photonics West, Gallium Nitride Materials and Devices VII, 2012, San Francisco, CA, United States. pp.82621V-1-5, ⟨10.1117/12.908236⟩. ⟨hal-00801202⟩
Ventriloquism effect on distance auditory cues
N. Côté, V. Koehl, B. Paquier
11th Congrès Français d'Acoustique joint with 2012 Annual IOA Meeting, Acoustics 2012, 2012, Nantes, France. pp.1063-1067. ⟨hal-00801039⟩
Impurity-limited mobility and variability in gate-all-around silicon nanowires
Y.M. Niquet, H. Mera, C. Delerue
Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩
100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies
J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩
Evidence of impurity impact ionization avalanche in P-type diamond
V. Mortet, A. Soltani, Nicolas Nolhier
11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801157⟩
GaN MEMS resonators : from demonstration to microsystem-compatible performances
Marc Faucher, Achraf Ben Amar, Victor Y. Zhang, Yvon Cordier, Matthieu Werquin, Virginie Brandli, Bertrand Grimbert, Francois Vaurette, Pascal Tilmant, Marc François, Christophe Boyaval, Sylvie Lepilliet, Damien Ducatteau, Christophe Gaquière, Lionel Buchaillot, Didier Theron
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4. ⟨hal-00801104⟩