2014 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2014, Jul 2014, Memphis, TN, United States. pp.1181-1182, ⟨10.1109/APS.2014.6904917⟩. ⟨hal-03346231⟩

Communication dans un congrès

Phononic crystals patterning by e-beam lithography "dots on the fly" methodology for integration into thermoelectric energy converters

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

A phononic engineered pattern is conceptualized and realized to hinder the phonons propagation and reduce the lattice thermal conductivity. The pattern fabrication methodology is shown and the procedure of integration on suspended membrane for thermal conductivity characterization is depicted. The…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020281⟩

Communication dans un congrès

Microscopie champ proche micro-ondes pour la caractérisation de liquides

Sijia Gu, Kamel Haddadi, Tuami Lasri

Une plate-forme de microscopie champ proche micro-ondes pour la caractérisation de liquides est proposée. La technique est basée sur l'association d'un analyseur de réseau micro-ondes et d'une sonde coaxiale évanescente. Le principe du système proposé est basé sur le développement d…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020399⟩

Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

Communication dans un congrès

3D micro-supercapacitor based on MnO2 electrodes on silicon substrate

Etienne Eustache, Camille Douard, Pascal Tilmant, Dmitri Yarekha, Laurence Morgenroth, Christophe Lethien, Thierry Brousse

226th Meeting of the Electrochemical Society and XXIX Congreso de la Sociedad Mexicana de Electroquímica, 2014 ECS and SMEQ Joint International Meeting, 2014, Cancun, Mexico. ⟨hal-01015285⟩

Article dans une revue

Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Irma Saraswati, Arnaud Stolz, S. Ko, El Hadj Dogheche, Nji Raden Poespawati, Retno Wigajatri, Didier Decoster

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM…

Advanced Materials Research, 2014, 980, pp.41-45. ⟨10.4028/www.scientific.net/AMR.980.41⟩. ⟨hal-01020484⟩