Publications

Affichage de 6951 à 6960 sur 16231


  • Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩

  • Article dans une revue

Carbohydrate-lectin interaction on graphene-coated surface plasmon resonance (SPR) interfaces

Abra Penezic, Geetanjali Deokar, Dominique Vignaud, Emmanuelle Pichonat, Henri Happy, Palaniappan Subramanian, Blaženka Gasparovic, Rabah Boukherroub, Sabine Szunerits

The paper describes the detection of carbohydrate- lectin interaction on graphene-on-metal surface plasmon resonance (SPR) interfaces. Graphene-coated gold-based SPR interfaces were formed through the transfer of large-area graphene grown by chemical vapor deposition (CVD) on polycrystalline Cu…

Plasmonics, 2014, 9, pp.677-683. ⟨10.1007/s11468-014-9686-3⟩. ⟨hal-00994787⟩

  • Proceedings/Recueil des communications

Lavoisier and Sadi Carnot. Chemical–and–Physical Sciences as Dating Back to Two Survived Scientific Revolutions: 1789 And 1824

Raffaele Pisano, Rémi Franckowiak

Proceedings of the 9th International Organizing Science Technology Education – IOSTE symposium for Central and Eastern Europe - University of Hradec Králové, Gaudeamus Králové, pp.42-54, 2014, 978-80-7435-416-8. ⟨hal-04512994⟩

  • Article dans une revue

The effect of deposition power on the micro-structure and dielectric response of Pb0.4Sr0.6TiO3 thin films

K. Li, Denis Remiens, G. Du, T. Li, X.L. Dong, G.S. Wang

Ceramics International, 2014, 40, pp.149-153. ⟨10.1016/j.ceramint.2013.05.115⟩. ⟨hal-00903763⟩

  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Article dans une revue

Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film

C. Jegou, L. Michalas, T. Maroutian, G. Agnus, M. Koutsoureli, G. Papaioannou, L. Largeau, David Troadec, A. Leuliet, P. Aubert, P. Lecoeur

The conduction mechanisms through a lead zirconate titanate (PZT) thin film grown by pulsed laser deposition with a La0.67Sr0.33MnO3 (LSMO) buffer layer on epitaxial Pt (111) were assessed in the 230-330 K temperature range. X-Ray diffraction and transmission electron microscopy evidenced a…

Thin Solid Films, 2014, 563, pp.32-35. ⟨10.1016/j.tsf.2013.12.043⟩. ⟨hal-01009981⟩

  • Communication dans un congrès

[Invited] High frequency electronic devices : impact of beyond graphene materials

Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Emiliano Pallecchi, Abdelkarim Ouerghi, Dominique Vignaud, Gilles Dambrine

Considering graphene field effect transistors (GFETs), considerable efforts have been made during the recent years to reach impressive current gain cut-off frequency (ft) over 400 GHz. Unfortunately, for these devices, the maximum frequency of oscillation (fmax) remains under 100GHz. This deviation…

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, 2014, Tampa, FL, United States. ⟨hal-01044773⟩