Publications

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩

• Article dans une revue

Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

IEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩. ⟨hal-00603002⟩

• Communication dans un congrès

Numerical assessment of propagation channel characteristics for future application of power line communication in aircraft

S. Bertuol, I. Junqua, Virginie Degardin, Pierre Degauque, M. Lienard, M. Dunand, J. Genoulaz

EMC Europe 2011, 2011, York, United Kingdom. pp.506-511. ⟨hal-00800255⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential…

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Communication dans un congrès

Long wavelength determination of a strained quantum well structure based on GaxIn1-x-yAsySb1-y/GaSb for gas detection

Abdelkader Aissat, Said Nacer, H. Aliane, Jean-Pierre Vilcot

In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct…

Saudi International Electronics, Communications and Photonics Conference, SIECPC 2011, 2011, Riyadh, Saudi Arabia. pp.1-3, ⟨10.1109/SIECPC.2011.5876979⟩. ⟨hal-00800058⟩

• Communication dans un congrès

Calibration of the non linear vector network analyzer (PNA-X) for probe measurements

R. Ouhachi, D. Ducatteau, Christophe Gaquière, T. Lacave, P. Chevalier, D. Gloria

6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.81-84. ⟨hal-00800112⟩

• Communication dans un congrès

Piezoelectric membrane actuator design

F. Casset, M. Cueff, E. Defay, G. Le Rhun, A. Suhm, P. Ancey, Arnaud Devos

12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011, 2011, Linz, Austria. pp.1-5, ⟨10.1109/ESIME.2011.5765797⟩. ⟨hal-00800090⟩

• Communication dans un congrès

Wide bandgap self switch nanodevices for THz applications at room temperature

Christophe Gaquière, Guillaume Ducournau, P. Sangare, B. Grimbert, M. Faucher, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1150-1152. ⟨hal-00800102⟩