Publications

• Article dans une revue

Effects of crystal phase mixing on the electrical properties of InAs nanowires

C. Thelander, P. Caroff, S.R. Plissard, A.W. Dey, K.A. Dick

Nano Letters, 2011, 11, pp.2424-2429. ⟨10.1021/nl2008339⟩. ⟨hal-00603006⟩

• Article dans une revue

Dark-current-free petawatt laser-driven wakefield accelerator based on electron self-injection into an expanding plasma bubble

S y Kalmykov, S A Yi, Alexandre Beck, a F Lifschitz, X Davoine, E Lefebvre, V Khudik, G Shvets, M C Downer

A dark-current-free plasma accelerator driven by a short (≤150 fs) self-guided petawatt laser pulse is proposed. The accelerator uses two plasma layers, one of which, short and dense, acts as a thin nonlinear lens. It is followed by a long rarefied plasma (~1017 electrons cm−3) in which background…

Plasma Physics and Controlled Fusion, 2011, 53 (1), pp.014006. ⟨10.1088/0741-3335/53/1/014006⟩. ⟨hal-01164312⟩

• Communication dans un congrès

Étude de la dynamique d'une goutte d'eau soumise à des ondes acoustiques de surface

Adrien Bussonnière

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807163⟩

• Communication dans un congrès

[Invité] Composants organiques et systèmes moléculaires pour les architectures de calcul neuro-inspirées

D. Vuillaume

2èmes Journées du GDR Electronique Organique, 2011, Grenoble, France. ⟨hal-00807184⟩

• Communication dans un congrès

Monte Carlo simulation of electrical and thermal properties of nanowire-based insulated gate transistors

T. Sadi, Jean-Luc Thobel, F. Dessenne, Christophe Dalle

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591397⟩

• Chapitre d'ouvrage

Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩

• Article dans une revue

Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs

R. Rengel, M.J. Martin, Francois Danneville

IEEE Electron Device Letters, 2011, 32, pp.72-74. ⟨10.1109/LED.2010.2082488⟩. ⟨hal-00572639⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used…

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• Communication dans un congrès

Phase-control in phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P. Deymier

10th Anglo-French Physical Acoustics Conference, AFPAC'11, 2011, Fréjus, France. ⟨hal-00574514⟩

• Article dans une revue

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud, David Troadec

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick…

IEEE Electron Device Letters, 2011, 32 (11), pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩