Publications

• Article dans une revue

An analytical model for the intercell interference power in the downlink of wireless cellular networks

B. Pijcke, Marie Zwingelstein, Marc G. Gazalet, M Gharbi, Patrick Corlay

In this paper, we propose a methodology for estimating the statistics of the intercell interference power in the downlink of a multicellular network. We first establish an analytical expression for the probability law of the interference power when only Rayleigh multipath fading is considered. Next…

EURASIP Journal on Wireless Communications and Networking, 2011, 2011, pp.95. ⟨10.1186/1687-1499-2011-95⟩. ⟨hal-00783406⟩

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩

• Communication dans un congrès

Guide d'onde à fentes pour la détection des chutes sur les voies ferroviaires

A. Mroue, M. Heddebaut, Fouzia Boukour, Atika Rivenq

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 169, 2E19, 1-4. ⟨hal-00603130⟩

• Communication dans un congrès

Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4. ⟨hal-00597144⟩

• Article dans une revue

Microwave properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 hetero layered films directly sputtered on Si up to 50 GHz

L.H. Yang, G.S. Wang, X.L. Dong, Freddy Ponchel, Denis Remiens

Journal of the American Ceramic Society, 2011, 94, pp.2262-2265. ⟨10.1111/j.1551-2916.2011.04610.x⟩. ⟨hal-00639934⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge…

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

Modelling of optical Kerr effects on the static and dynamic behaviors of quantum cascade laser

A. Hamadou, Jean-Luc Thobel

Optics Communications, 2011, 284, pp.2972-2979. ⟨10.1016/j.optcom.2011.01.078⟩. ⟨hal-00591326⟩

• Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩