Publications

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with…

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩

• Article dans une revue

Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory

D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩

• Article dans une revue

Conception of patch antenna at wide band

M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni

International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices

H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu

The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For…

IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩

• Article dans une revue

From rejection to transmission with stacked arrays of split ring resonators

Jorge Carbonell, Eric Lheurette, Didier Lippens

We report on free space transmission experiments carried out on stacked split ring resonator (SRRs) arrays operating at microwave frequencies. We start from the case of a single frequency selective surface which exhibits a rejection at the SRR resonance frequency. By stacking SRR arrays in the…

Progress In Electromagnetics Research, 2011, 112, pp.215-224. ⟨10.2528/PIER10121402⟩. ⟨hal-00572634⟩

• Article dans une revue

Specific absorption rate (SAR) distribution in the human head at global system mobil (GSM) frequencies

S. Bri, S. Kassimi, M. Habibi, A. Mamouni

European Journal of Scientific Research, 2011, 49, pp.590-600. ⟨hal-00572657⟩

• Article dans une revue

Negative refraction of longitudinal waves in a two-dimensional solid-solid phononic crystal

Charles Croënne, E.D. Manga, B. Morvan, A. Tinel, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.054301-1-5. ⟨10.1103/PhysRevB.83.054301⟩. ⟨hal-00572641⟩

• Article dans une revue

UWB multiple access communication system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

Wireless Personal Communications, 2011, 56, pp.333-352. ⟨10.1007/s11277-009-9835-8⟩. ⟨hal-00572654⟩