Publications

Affichage de 9151 à 9160 sur 16474


  • Article dans une revue

Application of the finite differences method (FDTD) for the modeling of SAR in biological tissues

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

Physical and Chemical News, 2011, 60, pp.31-40. ⟨hal-00783438⟩

  • Article dans une revue

Improved micromachining of all SU-8 3D structures for a biologically-inspired flying robot

X.Q. Bao, Thomas Dargent, Sébastien Grondel, J.B. Paquet, Eric Cattan

Microelectronic Engineering, 2011, 88, pp.2218-2224. ⟨10.1016/j.mee.2011.01.065⟩. ⟨hal-00795914⟩

  • Communication dans un congrès

Study in the THz domain of metamaterials exhibiting a negative refractive index

F. Garet, J.L. Coutaz, S. Wang, Eric Lheurette, D. Lippens

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807135⟩

  • Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

  • Communication dans un congrès

Phoxonic Crystals : A review

Sarah Benchabane, Said Sadat-Saleh, Maria-Pilar Bernal, Jean-Charles Beugnot, Vincent Laude, Yan Pennec, Bahram Djafari-Rouhani, Nikos Papanikolaou, Alejandro Martinez

Periodically structured materials exhibiting simultaneous photonic and phononic band gaps offer unprecedented ways to tailor photon-phonon interactions. A review of the works reported on these materials, sometimes termed "phoxonic crystals", is presented before highlighting theoretical…

Phononics 2011, May 2011, Sante Fe, United States. pp.84. ⟨hal-00639453⟩

  • Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

  • Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

  • Communication dans un congrès

120nm AlSb/InAs HEMTs

Yannick Roelens, A. Olivier, A. Noudeviwa, L. Desplanque, Francois Danneville, Nicolas Wichmann, X. Wallart, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4. ⟨hal-00591362⟩

  • Communication dans un congrès

Growth of self-catalyzed GaAs nanowire arrays on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, K.A. Dick, X. Wallart, P. Caroff

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591395⟩