Publications
Affichage de 8911 à 8920 sur 16086
Réalisation et caractérisation de dispositifs MOSFET nanométriques à base de réseaux denses de nanofils verticaux en silicium
Xiang-Lei Han
2011. ⟨hal-00799413⟩
Germanium adsorption and initial growth on SrTiO3 (001) surface : a first principles investigation
J.J. Wang, I. Lefebvre
Journal of Physical Chemistry C, 2011, 115, pp.22893-22900. ⟨10.1021/jp205074w⟩. ⟨hal-00783408⟩
A sensor network based on RFID inventory for retail application
C. Anssens, N. Rolland, P.A. Rolland
IEEE International Conference on RFID-Technologies and Applications, RFID-TA 2011, 2011, Sitges, Spain. pp.64-67, ⟨10.1109/RFID-TA.2011.6068617⟩. ⟨hal-00799981⟩
RF characterization of epitaxial graphene nano-ribbon field effect tansistors
N. Meng, J. Ferrer-Fernandez, O. Lancry, E. Pichonat, D. Vignaud, Gilles Dambrine, H. Happy
IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. 1-3, selected as finalist of best student paper competition, ⟨10.1109/MWSYM.2011.5972627⟩. ⟨hal-00799963⟩
TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
Y. Wang, M.P. Chauvat, P. Ruterana, L. Desplanque, X. Wallart
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States. ⟨hal-00807156⟩
Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces
L. Desplanque, S. El Kazzi, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. ⟨hal-00807153⟩
Alternating current magnetoresistance for determination of electron mobility and concentration under the gate in submicrometer Si and GaN field effect transistors
R. Tauk, W. Knap, J. Lusakowski, M. Sakowicz, Z. Bougrioua, M. Aziz, P. Lorenzini, F. Boeuf, T. Skotnicki
Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807634⟩
[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformability
Jean-Claude de Jaeger, Virginie Hoel, Marie Lesecq, N. Defrance, F. Lecourt, Y. Douvry, Christophe Gaquière, H. Maher, S. Bouzid, M. Heuken, C. Giesen, N. Ketteniss, H. Behmenburg, M. Eickelkamp, A. Vescan, Y. Cordier, A. Ebongue
European Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom. ⟨hal-00807597⟩
Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes
H. Happy, L. Nougaret, Vincent Derycke, Gilles Dambrine
IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972794⟩. ⟨hal-00799792⟩
50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz
J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799699⟩