Publications

• Communication dans un congrès

Giant piezoresistance in silicon nanowires

A. Rowe, S. Arscott

5th Nanowire Workshop, NW 2012, 2012, Berlin, Germany. ⟨hal-00797717⟩

• Communication dans un congrès

Monolithic integration of Ge on SrTiO3 : mismatch accommodation for very heterogeneous epitaxial systems

B. Gobaut, J. Penuelas, A. Danescu, N. Blanc, V. Favre-Nicolin, G. Renaud, J. Wang, I. Lefebvre, G. Saint-Girons

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium M - More than Moore : novel materials approaches for functionalized silicon based microelectronics, 2012, Strasbourg, France. ⟨hal-00797762⟩

• Communication dans un congrès

Stability of signals generated with a dual-frequency laser and a UTC photodiode up to 700 GHz

Joachim Börner, Guillaume Pillet, Loïc Morvan, Daniel Dolfi, Alexandre Beck, Philipp Latzel, Fabio Pavanello, Guillaume Ducournau, Jean-Francois Lampin

Low phase noise and tunable THz-signals from 300 GHz to 1 THz are obtained with a combination of a unitravelling carrier photodiode and a solid-state dual-frequency laser at 1.5 μm. The spectral purity is precisely characterized. Phase noises as low as -20 dBc/Hz at 1 kHz offset from the carrier…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380084⟩. ⟨hal-00803100⟩

• Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

• Communication dans un congrès

Nucleation mechanisms of self-catalyzed nanowires on silicon

E. Russo-Averchi, J. Arbiol, E. Uccelli, P. Krogstrup, S. Conesa-Boj, A. Dalmau I Mallorqui, M. Heiss, D. Ruffer, J. Nygard, J.R. Morante, P. Caroff, A. Fontcuberta I Morral

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797370⟩

• Communication dans un congrès

Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates

S. El Kazzi, L. Desplanque, Y. Wang, P. Ruterana, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II, 2012, San Francisco, CA, United States. ⟨hal-00797368⟩

• Communication dans un congrès

Analysis of surface charging effects in passivated AlGaN/GaN HEMTs

M. Gassoumi, H. Mosbahi, B. Grimbert, Christophe Gaquière, H. Maaref

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium Q : Novel materials and fabrication methods for new emerging devices, 2012, Strasbourg, France. ⟨hal-00798219⟩

• Communication dans un congrès

Modulation of the g-factor in bottom-gated InAs nanowire quantum dots

A. Ghaddar, B. Fülöp, P. Caroff, David Troadec, X. Wallart, R. Leturcq

31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00798182⟩

• Communication dans un congrès

Étude de la longueur de cohérence de phase et des états de spin dans des boîtes quantiques réalisées dans les nanofils InAs

C. Rolland, B. Fülöp, A. Ghaddar, P. Caroff, David Troadec, R. Leturcq

Ecole thématique du CNRS - Physique Quantique Mésoscopique - Transport quantique électronique : cohérence, interactions et symétries, 2012, Cargèse, France. ⟨hal-00798126⟩

• Communication dans un congrès

Electrical transport measurements of individual III-V semiconductor nanowires with reconstructed sidewalls

Corentin Durand, Maxime Berthe, Y. Makoudi, T.H. Nguyen, P. Caroff, J.P. Nys, B. Grandidier

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00798122⟩