Publications

Affichage de 8361 à 8370 sur 16231


  • Article dans une revue

Engineering the hypersonic phononic band gap of hybrid Bragg stacks

D. Schneider, F. Liaqat, E.H. El Boudouti, Y. El Hassouani, Bahram Djafari-Rouhani, W. Tremel, H.J. Butt, G. Fytas

Nano Letters, 2012, 12, pp.3101-3108. ⟨10.1021/nl300982d⟩. ⟨hal-00787474⟩

  • Communication dans un congrès

High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797346⟩

  • Autre publication scientifique

Modélisation et optimisation des transmissions ultra-large bande à impulsions radio dans les réseaux ad hoc

Kouakou Kouassi

2012. ⟨hal-00799277⟩

  • Communication dans un congrès

Dual phononic and photonic strip waveguides

Yan Pennec, Bahram Djafari-Rouhani, C.S. Li, Y. El Hassouani, J.M. Escalante, A. Martinez, S. Benchabane, V. Laude, N. Papanikolaou

SPIE Photonics Europe, Photonic Crystal Materials and Devices, 2012, Brussels, Belgium. ⟨hal-00798120⟩

  • Article dans une revue

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩

  • Article dans une revue

The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks

B. van Damme, K. van den Abeele, Olivier Bou Matar

Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩

  • Communication dans un congrès

In0.53Ga0.47As MOSFET with gate-first and gate-last process

J.J. Mo, Nicolas Wichmann, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩

  • Article dans une revue

Impurity-limited mobility and variability in gate-all-around silicon nanowires

Y.M. Niquet, H. Mera, C. Delerue

Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩

  • Communication dans un congrès

100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩

  • Communication dans un congrès

Ventriloquism effect on distance auditory cues

N. Côté, V. Koehl, B. Paquier

11th Congrès Français d'Acoustique joint with 2012 Annual IOA Meeting, Acoustics 2012, 2012, Nantes, France. pp.1063-1067. ⟨hal-00801039⟩