Publications

• Communication dans un congrès

Study of rough surface to decrease reverberation noise in ultrasonic imaging

Jin-Ying Zhang, G. Han, S.M. Chen, Y. Qian, Wei-Jiang Xu, Julien Carlier, Bertrand Nongaillard

Rough back surface is investigated to decrease the reverberation noise in ultrasonic imaging. Silicon crystal is selected as the backing substrate of the ultrasonic transducer because rough structure is convenient to be fabricated on silicon substrate using microfabrication technologies. Different…

10th IEEE International New Circuits and Systems Conference, NEWCAS 2012, 2012, Montréal, QC, Canada. pp.509-512, ⟨10.1109/NEWCAS.2012.6329068⟩. ⟨hal-00803090⟩

• Communication dans un congrès

Parameter evaluation of outdoor SIMO radio channels for GSM applications

Davy Gaillot, Pierre Laly, Isabelle Vin, M. Lienard

In this work, the time-delay and direction of arrival parameters for an outdoor SIMO (Single-Input Multiple-Output) radio channel are obtained from a high-resolution estimation algorithm and advanced 3D ray-tracing. The SIMO radio channel was measured on the Lille1 campus under Non-Line-of-Sight (…

4th COST IC1004 Management Committee and Scientific Meeting, 2012, Lyon, France. ⟨hal-00961462⟩

• Communication dans un congrès

High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate

Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, Sylvie Lepilliet, D. Gloria, C. Raynaud, Emmanuel Dubois, Francois Danneville

12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩. ⟨hal-00801054⟩

• Communication dans un congrès

Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩. ⟨hal-00801055⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environments

N. Azzaoui, Laurent Clavier

IEEE Wireless Communications and Networking Conference, WCNC 2012, Workshop on Internet of Things Enabling Technologies, 2012, Paris, France. pp.191-195, ⟨10.1109/WCNCW.2012.6215488⟩. ⟨hal-00801070⟩

• Communication dans un congrès

Frequency agile mechanical antenna for low-cost millimeter-wave applications

Y. Orlic, B. Lacroix, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, P. Coquet, J. Papapolymerou

Joint 2012 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, APS-URSI 2012, 2012, Chicago, IL, United States. paper 509.8, 1-2, ⟨10.1109/APS.2012.6348457⟩. ⟨hal-00801078⟩

• Article dans une revue

Properties of InxGa1-xN films in terahertz range

A. Gauthier-Brun, J.H. Teng, El Hadj Dogheche, W. Liu, A. Gokarna, M. Tonouchi, S.J. Chua, Didier Decoster

Applied Physics Letters, 2012, 100, pp.071913-1-5. ⟨10.1063/1.3684836⟩. ⟨hal-00787430⟩

• Article dans une revue

Non-radiative complete surface acoustic wave bandgap for finite-depth holey phononic crystal in lithium niobate

Didit Yudistira, Yan Pennec, Bahram Djafari-Rouhani, Samuel Dupont, Vincent Laude

We demonstrate the existence of non-radiative complete surface acoustic wave(SAW)bandgaps for two-dimensional piezoelectric phononic crystals of holes. Holes of finite depth in a semi-infinite LiNbO3 substrate are specifically considered. SAWbandgaps are determined from the band structure…

Applied Physics Letters, 2012, 100, pp.061912. ⟨10.1063/1.3684839⟩. ⟨hal-00759306⟩

• Communication dans un congrès

4-port isolated MOS modeling and extraction for mmW applications

B. Dormieu, P. Scheer, C. Charbuillet, S. Jan, Francois Danneville

38th European Solid-State Circuits Conference, ESSCIRC 2012, 2012, Bordeaux, France. joint ESSDERC/ESSCIRC session B3L-A, paper ID 3149, 38-41, ⟨10.1109/ESSCIRC.2012.6341251⟩. ⟨hal-00801044⟩

• Communication dans un congrès

High frequency epitaxial graphene fields effect transistors (GFET) on SiC

D. Mele, E. Pichonat, S. Fregonese, A. Ouerghi, H. Happy

13th Trends in Nanotechnology International Conference, TNT2012, 2012, Madrid, Spain. pp.1-2. ⟨hal-00801050⟩