Publications

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Communication dans un congrès

Third-order complex amplitudes tracking loop for slow fading channel estimation

H.Q. Shu, L. Ros, E.P. Simon

19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩

• Communication dans un congrès

Optimization of electrodes design for PZT thin-film actuated membranes

F. Casset, H. Michaud, T. Ricart, G. Le Rhun, M. Cueff, J. Abergel, P. Ancey, D. Faralli, Arnaud Devos, S. Fanget, E. Defay

This paper reports on the optimization of electrodes design for sol-gel Pb(Zr0.52, Ti0.48)O3 (PZT) thin-film actuated-membranes. PZT can be used in many actuator applications such as micro mirror, RF MEMS, inkjet or loudspeaker due to its strong piezoelectric properties. We aim to design membrane-…

26th European Conference on Solid-State Transducers, Eurosensors XXVI, Sep 2012, Kraków, Poland. pp.108-111, ⟨10.1016/j.proeng.2012.09.096⟩. ⟨hal-00801141⟩

• Article dans une revue

Direct characterization of native chemical ligation of peptides on hydrogenated silicon nanowires

N. Dendane, O. Melnyk, T. Xu, B. Grandidier, Rabah Boukherroub, D. Stievenard, Yannick Coffinier

Langmuir, 2012, 28, pp.13336-13344. ⟨10.1021/la3030217⟩. ⟨hal-00787470⟩

• Article dans une revue

A 10-MHz GaN HEMT DC/DC boost converter for power amplifier applications

F. Gamand, M.D. Li, Christophe Gaquière

IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59, pp.776-779. ⟨10.1109/TCSII.2012.2228397⟩. ⟨hal-00787876⟩

• Article dans une revue

Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires

S. Gorji Ghalamestani, M. Ek, B. Ganjipour, C. Thelander, J. Johansson, P. Caroff, K.A. Dick

Nano Letters, 2012, 12, pp.4914-4919. ⟨10.1021/nl302497r⟩. ⟨hal-00786991⟩

• Communication dans un congrès

Power line communication in aircraft : channel modeling and performance analysis

Virginie Degardin, M. Lienard, Pierre Degauque, I. Junqua, S. Bertuol

8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, 2012, Playa del Carmen, Mexico. pp.1-3, ⟨10.1109/ICCDCS.2012.6188890⟩. ⟨hal-00812343⟩