Publications

• Communication dans un congrès

Characterization of InxGa1-xN/GaN heterostructures for x~0.30 and x~0.55 by XRD and TEM methods

I. Dogmus, A. Addad, C. Lethien, P. Roussel, El Hadj Dogheche, N. Rolland, F Medjdoub

3èmes Journées Nationales sur la Récupération et le Stockage d'Energie pour l'Alimentation des Microsystèmes Autonomes, JNRSE 2013, 2013, Toulouse, France. 2 p. ⟨hal-00878378⟩

• Communication dans un congrès

Nouveau commutateur moléculaire photomécanique basé sur un système π-conjugué linéaire

S. Lenfant, D. Demeter, M. Oçafrain, P. Blanchard, David Guérin, Christophe Krzeminski, F. Cleri, J. Roncali, D. Vuillaume

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878796⟩

• Communication dans un congrès

Nanoscale transport measurements with multiple probe scanning tunneling microscopy

Maxime Berthe, Corentin Durand, R. Leturcq, B. Grandidier

Development of nanometer-sacle probing techniques have become imperative for current flow and resistivity measurements with nanometer scale spatial resolution in a variety of materials and devices. The use of weakly coupled scanning tunneling probes to detect transport phenomena appears to be an…

16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., ⟨10.1051/metrology/201313001⟩. ⟨hal-00877775⟩

• Article dans une revue

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2013, 412, pp.126-129. ⟨10.1016/j.physb.2012.11.031⟩. ⟨hal-00796437⟩

• Article dans une revue

GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses

Emilien Peytavit, S. Formont, Jean-Francois Lampin

Electronics Letters, 2013, 49, pp.207-208. ⟨10.1049/el.2012.3993⟩. ⟨hal-00796471⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Communication dans un congrès

A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks

H. Sellier, M. Pala, S. Baltazar, P. Liu, B. Hackens, F. Martins, X. Wallart, L. Desplanque, V. Bayot, S. Huant

16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland. ⟨hal-00878505⟩

• Communication dans un congrès

Application of magnetoelastic materials as active elements in ultrasonic WPC-tomography of liquids flows

Y.V. Pylnov, Philippe Pernod, V.L. Preobrazhensky, Y.I. Kutlubaeva, Nikolay Smagin, P.N. Shirkovsky

International Conference on Functional Materials, ICFM 2013, 2013, Partenit, Crimea, Ukraine. ⟨hal-00878514⟩