Publications

Affichage de 6611 à 6620 sur 16086


  • Communication dans un congrès

Chemically improved high performance solution processed indium gallium zinc oxide thin-film transistors

Mohammed Benwadih, Dominique Vuillaume, Romain Coppard

10th International Thin-Film Transistor Conference, ITC 2014, Jan 2014, Delft, Netherlands. ⟨hal-00957807⟩

  • Communication dans un congrès

Photo-assisted growth of semiconductor nanostructures in silica matrices

Bruno Capoen, Hicham El Hamzaoui, Odile Cristini-Robbe, Remy Bernard, Laurent Bigot, Antoine Le Rouge, A. Chahadih, Christophe Kinowski, Mohamed Bouazaoui

1st International Symposium on Nanoparticles/Nanomaterials and Applications, Jan 2014, Lisbonne, Portugal. ⟨hal-01117526⟩

  • Communication dans un congrès

Tunable Antennas Using MEMS Switches for LTE Mobile Terminals

Aykut Cihangir, Fabien Ferrero, Cyril Luxey, G. Jacquemod, Emmanuel Larique, Renaud Robin, Patrice Brachat

Two antenna designs, using MEMS switches for operating band reconfigurability are presented in this paper. The study has been carried out in the scope of ARTEMOS project, whose main target is to propose tunable architectures for future mobile terminals. For this purpose, two antenna designs to…

9th Loughborough Antennas and Propagation Conference (LAPC), Nov 2013, Loughborough, United Kingdom. pp.22-26. ⟨hal-01347426⟩

  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

  • Communication dans un congrès

Characterization of multi-layered nanopore structure

Xiaokun Ding, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensly, Yujun Song, Alexey Klimov

Hybridization of nanostructures opens new avenues for the synthesis of nano-architectures with multi-function and novel physicochemical properties. In this paper, we developed nanosphere template assisted physical vapor deposition to fabricate ordered multi-layered nanostructures utilizing Ag/…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020258⟩