Publications

• Poster de conférence

Zinc oxide hierarchical nanostructures as photo anodes for PbS quantum dots sensitized solar cells

Basma El Zein, M. Zunic, A. Albadri, Y. Al Youssef, El Hadj Dogheche

European Materials Research Society Spring Meeting, E-MRS Spring 2016, May 2016, Lille, France. ⟨hal-03553234⟩

• Article dans une revue

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Bilal Janjua, Abderrahim Ramdane, Gilles Patriarche, Tien Khee Ng, Boon Seng Ooi, Didier Decoster, El Hadj Dogheche

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL…

MRS Advances, 2016, 1 (23), pp.1735-1742. ⟨10.1557/adv.2016.417⟩. ⟨hal-03780652⟩

• Article dans une revue

Order and progress

Christophe Delerue

Nature Materials, 2016, 15 (5), pp.498-499. ⟨10.1038/nmat4597⟩. ⟨hal-02906818⟩

• Article dans une revue

Surface acoustic wave characterization of optical sol-gel thin layers

Dame Fall, François Compoint, Marc Duquennoy, Hervé Piombini, Mohammadi Ouaftouh, Frédéric Jenot, Bogdan Piwakowski, Philippe Belleville, Chrystel Ambard

Controlling the thin film deposition and mechanical properties of materials is a major challenge in several fields of application. We are more particularly interested in the characterization of optical thin layers produced using sol-gel processes to reduce laser-induced damage. The mechanical…

Ultrasonics, 2016, 68, pp.102-107. ⟨10.1016/j.ultras.2016.02.006⟩. ⟨hal-03810583⟩

• Article dans une revue

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, N. Defrance, Etienne Okada, Yvon Cordier, Benjamin Damilano, Gema Tabares Jimenez, Abel Ebongue, Virginie Hoel

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2)…

IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩. ⟨hal-03270110⟩

• Article dans une revue

Guided waves in general anisotropic layered rectangular rods: An extended orthogonal polynomial approach

J.G. Yu, Jean-Etienne Lefebvre, Ch. Zhang

The orthogonal polynomial approach has been used to solve the guided wave propagation in structures for about 20 years, but was limited until now to one-dimensional structures, that is, structures with a finite dimension in only one direction, such as horizontally infinite flat plates and axially…

Mathematics and Mechanics of Solids, 2016, 21 (5), pp.636-646. ⟨10.1177/1081286514533340⟩. ⟨hal-04080535⟩

• Article dans une revue

On classifiers for blind feature‐based automatic modulation classification over multiple‐input–multiple‐output channels

Sofiane Kharbech, Iyad Dayoub, Marie Zwingelstein, Eric Pierre Simon

Modulation recognition is crucial for a good environmental awareness required by cognitive radio systems. In this study, the authors design and compare models of four among the most commonly used classifiers for feature-based automatic modulation classification (FB-AMC) algorithms. Classifiers…

IET Communications, 2016, 10 (7), pp.790-795. ⟨10.1049/iet-com.2015.1124⟩. ⟨hal-03382947⟩

• Article dans une revue

Microwave and millimeter wave properties of vertically-aligned single wall carbon nanotubes films

Kamel Haddadi, C. Tripon-Canseliet, Q. Hivin, Guillaume Ducournau, E. Teo, P. Coquet, B. K. Tay, Sylvie Lepilliet, Vanessa Avramovic, J. Chazelas, Didier Decoster

We present the experimental determination of the complex permittivity of vertically aligned single wall carbon nanotubes (SWCNTs) films grown on quartz substrates in the microwave regime from 10 MHz up to 67 GHz, with the electrical field perpendicular to the main axis of the carbon nanotubes (CNTs…

Journal of Electronic Materials, 2016, 45 (5), pp.2433-2441. ⟨10.1007/s11664-016-4362-3⟩. ⟨hal-03224656⟩

• Article dans une revue

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, F Medjdoub, R. Quere

no abstract

IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩. ⟨hal-01394908⟩

• N°spécial de revue/special issue

Guest Editorial Introduction to the Special Issue on Terahertz Near-Field Microscopy and Applications

Haewook Han, Giles Davies, Tahsin Akalin, Koichiro Tanaka

IEEE Transactions on Terahertz Science and Technology, 6, pp.353-355, 2016, ⟨10.1109/TTHZ.2016.2549861⟩. ⟨hal-03680777⟩