Pisano R. (ed). A History of Physics: Phenomena, Ideas & Mechanisms. Essays in Honor of Salvo D'Agostino, Springer, pp.3-18, In press, 978-3-031-26173-2. ⟨10.1007/978-3-031-26174-9_1⟩. ⟨hal-04511938⟩

Autre publication scientifique

Advances in Historical Studies [Editor in Chief 14/3]

Raffaele Pisano

2025. ⟨hal-05480617⟩

Ouvrages

An Intellectual History of Science in the Renaissance. Cultural and Fundamental Frameworks. Vol. 1

Raffaele Pisano

Springer, In press. ⟨hal-04859393⟩

Ouvrages

A History of Physics: Phenomena, Ideas and Mechanisms. Essays in Honor of Salvo D'Agostino

Raffaele Pisano

Springer, 2025, 978-3-031-26173-2. ⟨10.1007/978-3-031-26174-9⟩. ⟨hal-04515850⟩

N°spécial de revue/special issue

IDTC Special Issue. Newton's Principia & Newtonian Mechanics: Foundations, Heritage, Methodology, Editions, Popularization and Nature of Science Teaching

Raffaele Pisano, Paolo Bussotti, Gustavo Rodriguez Rocha

Foundations of Science, 2025. ⟨hal-04983576⟩

Article dans une revue

Using Synapse Saturation in Spiking Neural Networks for Wake Up Receivers in Internet of Things Networks

Guillaume Marthe, Claire Goursaud, Laurent Clavier

Energy consumption remains a predominant constraint in numerous Internet of Things (IoT) applications, as microcontrollers typically exhibit excessively high power consumption. To address this issue, novel circuit designs have been introduced, and the utilization of spiking neurons and analog…

IEEE Internet of Things Journal, 2025, pp.1-1. ⟨10.1109/JIOT.2025.3599668⟩. ⟨hal-05229337⟩

Article dans une revue

Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications

Beatriz Orfao, Amir Al Abdallah, Hugo Bouillaud, Guillaume Ducournau, Yannick Roelens, Malek Zegaoui, Mohammed Zaknoune

In this paper, we report the investigation of the thermal enhancement and the behavior of GaN Schottky diodes grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates for RF power applications and their potential to operate under extreme temperature. The Schottky barrier…

Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩. ⟨hal-05149241⟩

Article dans une revue

ScAlN/GaN-on-Si (111) HEMTs for RF applications

Seif El Whibi, Nagesh Bhat, Yassine Fouzi, Nicolas Defrance, Jean-Claude de Jaeger, Zahia Bougrioua, Florian Bartoli, Maxime Hugues, Yvon Cordier, Marie Lesecq

ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by…

Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩. ⟨hal-05008937⟩