Publications

Type de document

Mots clés

Auteur

Du

Au

Affichage de 3331 à 3340 sur 16232

Communication dans un congrès

Non-linear analysis of a broadband power amplifier at 300 GHz

Haitham Ghanem, Benjamin Schoch, Ingmar Kallfass, P. Szriftgiser, Malek Zegaoui, Mohammed Zaknoune, Francois Danneville, Guillaume Ducournau

In this article we present a new method to measure the third-order intercept point (IP3) of a 300 GHz medium power amplifier MMIC based on III-V technology in an on-wafer measurement setup. The extraction was carried out using a uni-travelling carrier photodiode as the input signal source. Taking…

15th European Microwave Integrated Circuits Conference, Session EuMIC12 - Design and Characterisation Techniques,, Jan 2021, Utrecht, Netherlands. pp.209-212. ⟨hal-03348195⟩

Article dans une revue

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, F Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity…

Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩

Article dans une revue

Development of broadband high-frequency piezoelectric micromachined ultrasonic transducer array

Xu-Bo Wang, Le-Ming He, You-Cao Ma, Wen-Juan Liu, Wei-Jiang Xu, Jun-Yan Ren, Antoine Riaud, Jia Zhou

Piezoelectric micromachined ultrasonic transducers (PMUT) are promising elements to fabricate a two-dimensional (2D) array with a pitch small enough (approximately half wavelength) to form and receive arbitrary acoustic beams for medical imaging. However, PMUT arrays have so far failed to combine…

Sensors, 2021, 21 (5), pp.1823. ⟨10.3390/s21051823⟩. ⟨hal-03260141⟩

Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩

Communication dans un congrès

Bowl-shaped ZnO ultrasonic transducer for photoacoustic/ultrasonic multimode microscopy

J. Zhang, D. Zhao, D. Li, F. Tian, Wei-Jiang Xu, X. Wu

A bowl-shaped ultrasonic transducer is proposed for photoacoustic/ultrasonic multimode microscopy. The transducer uses zinc oxide (ZnO) as the piezoelectric material, which has a better electromechanical coefficient than flexible PVDF polymer and ensures the detection sensitivity. The ZnO film is…

2021 IEEE International Ultrasonics Symposium (IUS), Sep 2021, Xi'an, China. ⟨10.1109/IUS52206.2021.9593419⟩. ⟨hal-03541939⟩

Communication dans un congrès

Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Ousmane Magatte Kane, Luca Lucci, Pascal Scheiblin, Thierry Poiroux, Jean-Charles Barbé, Francois Danneville

Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 81-84, https://ieeexplore.ieee.org/abstract/document/9337333. ⟨hal-03462849⟩

Communication dans un congrès

Temperature Sensitivity of Surface Phononic Crystals modes (SPnC) based on Ni Pillars array deposited on LiNBO3

Abdelkrim Talbi, Ghizlane Boussatour, Aurelien Mazzamurro, Cécile Ghouila-Houri, Olivier Boumatar, Philippe Pernod

This work focuses on the theoretical and experimental investigation of acoustic waves sensors based on 2D Surface Phononic Crystals (PnC). We investigated the temperature coefficient of frequency (TCF) for surface localized modes in 2D PnCs composed of Ni pillars deposited on Y-cut LiNBO3 substrate…

2021 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2021, Aug 2021, Paris, France. pp.1-3, ⟨10.1109/DTIP54218.2021.9568671⟩. ⟨hal-03541057⟩

Autre publication scientifique

Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)

A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, P. Aversa, A.C. Ferrari, Henri Happy, P. Legagneux, Emiliano Pallecchi

The original version of this Article contained an error in Fig. 7 and Fig. 8a, c, in which the unit on the vertical axes incorrectly read “μS”. This has been corrected to “S” in both the PDF and HTML versions of the Article. © 2021 The Author(s).

2021, pp.3507. ⟨10.1038/s41467-021-23916-0⟩. ⟨hal-03542160⟩

Article dans une revue

Thermoacoustic wave generation in multilayered thermophones with cylindrical and spherical geometries

Pierre Guiraud, Stefano Giordano, Olivier Bou Matar, Philippe Pernod, Raphael Lardat

A thermoacoustic sound generation model, based on the classical balance equations of the continuum mechanics, is here developed for the cylindrical and the spherical thermoacoustic wave generation. In both geometries, the model considers an arbitrary multilayered structure, where each layer can be…

Journal of Applied Physics, 2021, 129 (11), pp.115103. ⟨10.1063/5.0039458⟩. ⟨hal-03181464⟩

Communication dans un congrès

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩