Publications

• Communication dans un congrès

20 Gbit/s 306 GHz link enabled by Yagi-Uda antenna

Guillaume Ducournau, Fabio Pavanello, Aritrio Bandyopadhyay, Cybelle Belem-Gonçalves, Frédéric Gianesello, Cyril Luxey, Emilien Peytavit, Jean-Francois Lampin, Malek Zegaoui, Mohammed Zaknoune

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

2021 URSI GASS Conference, Session D08: Integrated Terahertz Electronic and Photonic Devices and Systems (Part 2), Aug 2021, Rome, Italy. pp.939-942. ⟨hal-03413356⟩

• Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, B. Grandidier, Pascale Diener, J. Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a…

Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France. ⟨hal-03606122⟩

• Communication dans un congrès

A Novel Online Subcarrier-Wise Extreme Learning Machine Receiver for OFDM Systems

Michel Saideh, Eric Pierre Simon, Joumana Farah

Recently, Extreme Learning Machine (ELM) started gaining interest among researchers in wireless communications as an online training solution for machine learning based receivers. ELM has proven to provide high training speed and global optimization capabilities. However, the number of needed…

17th International Conference on Wireless and Mobile Computing, Networking and Communications (WiMob 2021), Oct 2021, Bologna, Italy. pp.259-264, ⟨10.1109/WiMob52687.2021.9606391⟩. ⟨hal-03592846⟩

• Communication dans un congrès

Analysis of the Susceptibility of the LoRa Communication Protocol in the Railway Electromagnetic Environment

Virginie Deniau, Thomas Vantroys, Norbert Becuwe, Christophe Gransart, Artur Nogueira de Sao Jose, Alexandre Boé, Eric Pierre Simon, Olivier Vlamynck, Florent Valenti, Jonathan Villain, Quentin Rivette

In the context of the digital transformation of railway transportation systems, railway operators investigate the potentialities of the IoT (Internet of Things) in order to optimize the maintenance operations on the vehicles and the infrastructures. One of the interest is to use IoT communication…

URSI GASS 2021, XXXIV General Assembly and Scientific Symposium (GASS) of the International Union of Radio Science (URSI), Aug 2021, Rome, Italy. 4p. ⟨hal-03265936⟩

• Communication dans un congrès

Single-pole-double-throw RF switches based on monolayer MoS₂

Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches…

• Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good…

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

• Article dans une revue

Preanalytical issues and cycle threshold values in SARS-CoV-2 real-time RT-PCR testing: should test results include these?

Ilka Engelmann, Enagnon Kazali Alidjinou, Judith Ogiez, Quentin Pagneux, Sana Miloudi, Ilyes Benhalima, Mahdi Ouafi, Famara Sané, Didier Hober, Alain Roussel, Christian Cambillau, David Devos, Rabah Boukherroub, Sabine Szunerits

Since the emergence of SARS-CoV-2 pandemic, clinical laboratories worldwide are overwhelmed with SARS-CoV-2 testing using the current gold standard: real-time reverse-transcription polymerase chain reaction (RT-PCR) assays. The large numbers of suspected cases led to shortages in numerous reagents…

ACS Omega, 2021, 6 (10), pp.6528-6536. ⟨10.1021/acsomega.1c00166⟩. ⟨hal-03196337⟩

• Article dans une revue

H-Band Substrate-Integrated Discrete-Lens Antenna for High Data Rate Communication Systems

Kossaila Medrar, Loïc Marnat, Laurent Dussopt, Cybelle Belem-Gonçalves, Guillaume Ducournau, Cyril Luxey, Frédéric Gianesello

A substrate-integrated discrete-lens antenna manufactured in standard printed-circuit-board (PCB) technology is demonstrated in H-band (225-325 GHz). The arrays composed of phase-shifting unit cells and a waveguide-fed planar focal source are designed on a single PCB stack with five metal layers…

IEEE Transactions on Antennas and Propagation, 2021, 69 (7), pp.3677-3688. ⟨10.1109/TAP.2020.3044382⟩. ⟨hal-03546303⟩

• Article dans une revue

Oxygen vacancy engineering of TaO$_x$-based resistive memories by Zr doping for improved variability and synaptic behavior

João Palhares, Yann Beilliard, F. Alibart, Everton Bonturim, Daniel de Florio, Fabio Fonseca, Dominique Drouin, Andre Ferlauto

Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V$_O$) conductive…

Nanotechnology, 2021, 32 (40), pp.405202. ⟨10.1088/1361-6528/ac0e67⟩. ⟨hal-03539056⟩

• Article dans une revue

Piezoresistance in defect-engineered silicon

Heng Li, Abel Thayil, Chris Lew, Marcel Filoche, Brett Johnson, Jeff Mccallum, S. Arscott, Alistair C. H. Rowe

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current…

Physical Review Applied, 2021, 15 (1), 014046, 9 p. ⟨10.1103/PhysRevApplied.15.014046⟩. ⟨hal-03003310⟩