Publications

Affichage de 1601 à 1610 sur 16074


  • Communication dans un congrès

VPP: Privacy Preserving Machine Learning via Undervolting

Md Shohidul Islam, Behnam Omidi, Ihsen Alouani, Khaled Khasawneh

Machine Learning (ML) systems are susceptible to membership inference attacks (MIAs), which leak private information from the training data. Specifically, MIAs are able to infer whether a target sample has been used in the training data of a given model. Such privacy breaching concern motivated…

2023 IEEE International Symposium on Hardware Oriented Security and Trust (HOST), May 2023, San Jose, United States. pp.315-325, ⟨10.1109/HOST55118.2023.10133266⟩. ⟨hal-04182280⟩

  • Article dans une revue

Decentralized fault-tolerant controller based on cooperative smart-wireless sensors in large-scale buildings

Lala Rajaoarisoa, Nacer Kouider M’sirdi, Moamar Sayed-Mouchaweh, Laurent Clavier

The internet of things, based on smart-wireless sensor networks, is more and more used in buildings to monitor and improve their performance in terms of thermal comfort and power consumption. However, a detailed knowledge of the thermal and energy behaviour of the monitored smart building requires…

Journal of Network and Computer Applications (JNCA), 2023, Journal of Network and Computer Applications, 214, pp.103605. ⟨10.1016/j.jnca.2023.103605⟩. ⟨hal-04561576⟩

  • Article dans une revue

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

Martin Doublet, N. Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude de Jaeger

In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a…

Electronics, 2023, 12 (9), pp.2007. ⟨10.3390/electronics12092007⟩. ⟨hal-04107504⟩

  • Article dans une revue

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Orhan Özdemir, Hanife Baş, Neslihan Ayarcı Kuruoğlu, Kutsal Bozkurt, Mustafa Aydın, Fahrettin Sarcan, Ayşe Erol, Bandar Alshehri, Karim Dogheche, El Hadj Dogheche

Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue light-emitting device (LED). The emissions, peaking at 3.03 eV and 2.89 eV, were present in both PL and SPV…

Journal of Luminescence, 2023, 257, pp.119749. ⟨10.1016/j.jlumin.2023.119749⟩. ⟨hal-03997376⟩

  • Article dans une revue

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq, Yassine Fouzi, Ali Abboud, N. Defrance, Francois Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude de Jaeger, Eric Frayssinet, Yvon Cordier

In this paper, non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) are fabricated on AlGaN/ GaN high-electron-mobility transistors on 6H-SiC substrate. Low ohmic contact resistance of 0.13 Ω.mm is obtained. This paper demonstrates the high frequency and high power performance…

Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩. ⟨hal-04084512⟩