Publications

Affichage de 15771 à 15780 sur 16278


  • Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

  • Article dans une revue

Thermally detected optical absorption, reflectance and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Pierre Disseix, C. Payen, Joël Leymarie, Aime Vasson, F. Mollot

Journal of Applied Physics, 2000, 88, pp.4612-4618. ⟨hal-00158440⟩

  • Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

  • Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

  • Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

  • Article dans une revue

Modeling of integrated Lamb waves generation systems using a coupled finite element-normal modes expansion method

Emmanuel Moulin, Jamal Assaad, Christophe Delebarre, Sébastien Grondel, D. Balageas

Ultrasonics, 2000, 38, pp.522-526. ⟨hal-00159052⟩