Publications

• Communication dans un congrès

Power LDMOS design using an SOI RESURF architecture : on state / breakdown voltage trade-off

Emmanuel Dubois, K. Suzuki, E. Lampin

Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152238⟩

• Article dans une revue

AlGaAs-GaAs polarization converter with electrooptic phase mismatch control

Nicolas Grossard, Henri Porte, Jean-Pierre Vilcot, Bruno Bêche, J.P. Goedgebuer

IEEE Photonics Technology Letters, 2001, 13, pp.830-832. ⟨10.1109/68.935818⟩. ⟨hal-00152488⟩

• Article dans une revue

On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers

C. Priester, G. Grenet

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.125312/1-5. ⟨hal-00152562⟩

• Article dans une revue

2D-hydrodynamic energy model including breakdown phenomenon for power field effect transistor

Michel Rousseau, Jean-Claude de Jaeger

VLSI Systems Design, 2001, 13, pp.323-328. ⟨hal-00152593⟩

• Communication dans un congrès

L'interface physique biologie

D. Stievenard

Journées Micro et Nanotechnologies, 2001, Paris, France. ⟨hal-00152581⟩

• Autre publication scientifique

Modélisation par éléments finis du comportement des alliages à mémoire de forme

S. Rafanomezantsoa

2001. ⟨hal-00151684⟩

• Communication dans un congrès

Structural and electronic studies of InAs quantum dots embedded in GaAs by scanning tunneling microscopy

B. Grandidier

Alaska Meeting on Fundamental Optical Properties in Semiconductors, 2001, Girdwood, AK, United States. ⟨hal-00152583⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Article dans une revue

Modeling and underwater characterization of cymbal transducers and arrays

J. Zhang, Anne-Christine Hladky, W.J. Hughes, R. Newnham

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001, 48, pp.560-568. ⟨hal-00151690⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩