Publications

• Communication dans un congrès

PBG-like structure for microelectronics and opto-electronics

D. Lippens

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, 2001, Cagliari, Sardinia, Italy. ⟨hal-00152086⟩

• Communication dans un congrès

Modélisation d'applicateurs planaires de type fente annulaire pour thermothérapie micro-onde

Julien Carlier, V. Thomy, J.C. Camart, Luc Dubois, J. Pribetich

Actes de TELECOM 2001 & 2èmes Journées Franco-Maghrebines des Microondes et leurs Applications, JFMMA 2001, 2001, Casablanca, Maroc. ⟨hal-00152045⟩

• Article dans une revue

Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers : static and dynamical properties

Henri Le Gall, Jamal Ben Youssef, F. Socha, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod

Journal of the Magnetics Society of Japan, 2001, 25, pp.258-262. ⟨10.1063/1.372521⟩. ⟨hal-00152099⟩

• Communication dans un congrès

0.12 µm gate length InAlAs/InGaAs HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, V. Aspar, J. Mateos-Lopez

2001, pp.171-174. ⟨hal-00151762⟩

• Autre publication scientifique

Modélisation par éléments finis du comportement des alliages à mémoire de forme

S. Rafanomezantsoa

2001. ⟨hal-00151684⟩

• Communication dans un congrès

SAW characteristics in a layered ZnO/GaAs structure for design of integrated SAW filters

V. Zhang, Fabrice Lefebvre, Tadeusz Gryba

2001, pp.261-264. ⟨hal-00151743⟩

• Article dans une revue

Evidence of laser wavelength effect in picosecond ultrasonics : possible connection to interband transitions

Arnaud Devos, Catherine Lerouge

Physical Review Letters, 2001, 86, pp.2669-2672. ⟨hal-00151688⟩

• Autre publication scientifique

Antenne intégrée multicouche sur AsGa utilisant un diélectrique obtenu par plasma froid différé d'azote (RPECVD) : application aux communications point-multipoint

E. Vestiel

2001. ⟨hal-00151777⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate…

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Theoretical analysis of the density of states and phase times: Application to resonant electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui, B. Kharbouch

Physical Review B, 2001, 63 (3), pp.035312. ⟨10.1103/PhysRevB.63.035312⟩. ⟨hal-04069647⟩