Publications

• Communication dans un congrès

Characterization and modeling of in-vehicle power line propagation channel

M. Olivas-Carrion, Virginie Degardin, M. Lienard, Pierre Degauque

Proceedings of the 5th International Conference on ITS Telecommunications, ITST 2005, 2005, Brest, France. ⟨hal-00140789⟩

• Autre publication scientifique

Intégration des équipements électroniques dans la modélisation de l'architecture électrique des véhicules automobiles - Application à la prédiction de compatibilité électromagnétique dans les phases amont de la conception

S. Egot

2005. ⟨hal-00140409⟩

• Communication dans un congrès

Sizing of structures by laser ultrasonics using air-solid interface waves

Frédéric Jenot, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak

2005, pp.305-312. ⟨hal-00140394⟩

• Communication dans un congrès

Modal waves solved in complex wave number

Wei-Jiang Xu, Frédéric Jenot, Mohamed Ourak

2005, pp.156-163. ⟨hal-00140395⟩

• Communication dans un congrès

Dry etchnig of PZT thin films for bilayer actuator realization

Caroline Soyer, E. Fribourg-Blanc, Eric Cattan, Denis Remiens

2005, pp.203-211. ⟨hal-00138428⟩

• Article dans une revue

A Gm−C low−pass filter for zero−IF mobile applications with a very wide tuning range

D. Chamla, A. Kaiser, A. Cathelin, D. Belot

IEEE Journal of Solid-State Circuits, 2005, 40, pp.1443− 1450. ⟨hal-00138393⟩

• Communication dans un congrès

Conjugaison de phase appliquée au CND

Philippe Pernod, Vladimir Preobrazhensky

Journée Technique Contrôle Non Destructif, 2005, Villeneuve d'Ascq, France. ⟨hal-00137669⟩

• Communication dans un congrès

Formation of nano-domains in SAMs of long chain alkyltrichlorosilanes deposited on silicon

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125600⟩

• Article dans une revue

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films…

Journal of Crystal Growth, 2005, 284 (1-2), pp.184-189. ⟨10.1016/j.jcrysgro.2005.07.014⟩. ⟨hal-00130818⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩